Crystal growth of Yb3+-doped oxide single crystals for scintillator application

Akira Yoshikawa, Martin Nikl, Hiraku Ogino, Jong Ho Lee, Tsuguo Fukuda

Research output: Contribution to journalConference articlepeer-review

19 Citations (Scopus)

Abstract

Long emission wavelength scintillators are strongly required from the viewpoint of the practical use of silicon photo-diode, which has higher resolution with lower cost compared with photo-multipllier. Among the various scintillator emission centers, we regard emission from Yb3+ charge-transitions state (CTS) as a candidate. In order to investigate proper hosts for Yb3+ CTS, the yttrium gallium garnet host and lutetium aluminum garnet host were studied. Transparent and crack-free heavily Yb-doped YGG, i.e. {Y1-xYbx}3[Ga]2(Ga)3O 12 (Yb: YGG, x = 0.15, 0.5, 1.0) and heavily Yb-doped LuAG, i.e. {Lu1-xYbx}3[Al]2(Al)3O 12 (Yb: LuAG, x = 0.15, 0.5, 1.0) single crystals could be grown by the Modified Pulling Down method with 〈111〉 orientation. Emission, excitation spectra and decay kinetics were measured for these crystals. The CT transition of Yb3+ in the yttrium gallium garnet host was discussed compared with the Yb3+ one in the lutetium aluminum garnet host.

Original languageEnglish
Pages (from-to)94-99
Number of pages6
JournalJournal of Crystal Growth
Volume250
Issue number1-2
DOIs
Publication statusPublished - 2003 Mar
EventACCGE-14 - Seatle, WA, United States
Duration: 2002 Aug 42002 Aug 9

Keywords

  • A1. Charge transfer
  • A1. Garnet
  • A2. Growth from melt
  • A2. Single crystal growth
  • B1. Yb

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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