Crystal growth of Ce doped (Lu, Y) 3(Ga, Al) 5O 12 single crystal by the micro-puling-down method and their scintillation properties

Kei Kamada, Takayuki Yanagida, Jan Pejchal, Martin Nikl, Takanori Endo, Kousuke Tsutumi, Yutaka Fujimoto, Akihiro Fukabori, Akira Yoshikawa

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5 Citations (Scopus)


Ce}:(Lu, Y) 3(Ga, Al) 5O 12 single crystals were grown by the μ-PD method with RF heating system. In these crystals, Ce 3+ 4f-5d emission is observed within 500-530 nm wavelength. Emission peak shifts to shorter wavelength and the decay accelerates with increasing Ga concentration. In the case of Ce: (Lu 2 Y 13(Ga, Al) 5O 12 series, the Ce0.2% Lu 2Y 1Ga 3Al 2O 12 crystal showed the highest emission intensity. In order to determine light yield, the energy spectra were measured under 662 keV ã-ray excitation ( 137Cs source) and detection by an APD S8664-55(Hamamatsu). The light yield was calibrated from Fe 55 direct irradiation peak to APD. The light yield of Ce0.2%: Lu 2Y 1Ga 3Al 2O 3 sample was of about 30,000 photon/MeV. Dominant scintillation decay time was of about 50 ns.

Original languageEnglish
Article number6151861
Pages (from-to)2116-2119
Number of pages4
JournalIEEE Transactions on Nuclear Science
Issue number5 PART 2
Publication statusPublished - 2012


  • Crystals
  • luminescence
  • solid scintillation detectors

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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