Abstract
II-VI diluted magnetic semiconductor of Cd1-x-yMnxHgyTe1-zSez crystal (0.1 < x, y < 0.3, 0 ≤ z ≤ ≤ 0.02) has a high Hg vapor pressure at a temperature of crystal growth from a melt and also has temperature-composition phase diagrams with a wide solid solution. A quenched polycrystal ingot starting from a stoichiometric Cd1-x-yMnxHgyTe1-zSez melt was scaled up to a large size (20 mm diameter by 30 mm length) using a high-pressure synthesizing furnace, where a sealed quartz ampoule is subject to a high external pressure of argon gas (e.g. 14.0 MPa at 1060°C). Using this quenched polycrystal ingot, a large oriented single crystal has been grown by the zone melt method (ZM) for the the first time. It has a large size (20 mm diameter by 25 mm length), low insertion loss (0.2 dB at 0.98 μm) and compositional uniformity both in the axial and radial directions.
Original language | English |
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Pages (from-to) | 154-158 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 214 |
DOIs | |
Publication status | Published - 2000 Jun 2 |
Externally published | Yes |
Event | The 9th International Conference on II-VI Compounds - Kyoto, Jpn Duration: 1999 Nov 1 → 1999 Nov 5 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry