Crystal growth of Cd1-x-yMnxHgyTe1-zSez by a zone-melt method using a pressurized cast ingot

K. Onodera, H. Ohba, H. Sato, S. Nagayama

Research output: Contribution to journalConference article

Abstract

II-VI diluted magnetic semiconductor of Cd1-x-yMnxHgyTe1-zSez crystal (0.1 < x, y < 0.3, 0 ≤ z ≤ ≤ 0.02) has a high Hg vapor pressure at a temperature of crystal growth from a melt and also has temperature-composition phase diagrams with a wide solid solution. A quenched polycrystal ingot starting from a stoichiometric Cd1-x-yMnxHgyTe1-zSez melt was scaled up to a large size (20 mm diameter by 30 mm length) using a high-pressure synthesizing furnace, where a sealed quartz ampoule is subject to a high external pressure of argon gas (e.g. 14.0 MPa at 1060°C). Using this quenched polycrystal ingot, a large oriented single crystal has been grown by the zone melt method (ZM) for the the first time. It has a large size (20 mm diameter by 25 mm length), low insertion loss (0.2 dB at 0.98 μm) and compositional uniformity both in the axial and radial directions.

Original languageEnglish
Pages (from-to)154-158
Number of pages5
JournalJournal of Crystal Growth
Volume214
DOIs
Publication statusPublished - 2000 Jun 2
Externally publishedYes
EventThe 9th International Conference on II-VI Compounds - Kyoto, Jpn
Duration: 1999 Nov 11999 Nov 5

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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