Crystal growth of AgIn1-XGaXSe2 crystals grown by a vertical gradient freeze method

Kenji Yoshino, Hironori Komaki, Kousuke Itani, Shigefusa F. Chichibu, Youji Akaki, Tetsuo Ikari

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23 Citations (Scopus)


AgIn1-XGaXSe2 crystals were grown by a vertical gradient freeze method. All samples were shown to have a chalcopyrite structure and n-type conductivity by means of X-ray diffraction (XRD) and thermoprobe analysis, respectively. Electron probe microanalysis showed all crystals to be In-poor. Lattice constants a and c, calculated from the XRD were found to be proportional to X values in the AgIn1-XGaXSe2 crystals, indicating that they obeyed Vegard's law. Free exciton (FE) emission lines were clearly observed by photoluminescence at 77 K, indicating high crystal purity. The FE peak energies were seen to show a nonlinear dependence on the composition X values in the AgIn1-XGaXSe2 crystals.

Original languageEnglish
Pages (from-to)257-260
Number of pages4
JournalJournal of Crystal Growth
Issue number1-3
Publication statusPublished - 2002 Mar
Externally publishedYes


  • A1. Defects
  • A2. Gradient freeze technique
  • B1. Alloys
  • B2. Semiconducting quarternary alloys

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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