Crystal growth of β-FeSi2 thin film on (100), (110) and (111) plane of Si and yittria-stabilized zirconia substrates

Kensuke Akiyama, Satoru Kaneko, Takanori Kiguchi, Takashi Suemasu, Takeshi Kimura, Hiroshi Funakubo

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Thin films of β phase iron disilicide (β-FeSi2) with 100 nm in thickness were prepared on silicon (Si) and yittria-stabilized zirconia (YSZ) substrates using evaporation and RF magnetron sputtering methods. Epitaxial β-FeSi2 thin films were grown on (100) and (111) planes of Si and YSZ substrates, while noncrystallized films were deposited on (110) plane of both Si and YSZ substrates. The epitaxial relationships between the β-FeSi2 and YSZ were the same as those between β-FeSi2 and Si, in the case of (100) and (111) planes. It is possible that epitaxial β-FeSi2 film can be grown when substrates and β-FeSi2 surfaces consist of either a single element or only cations, while the crystalline film was not shown when either substrate or β-FeSi2 surface consists of a mixture of anions and cations or iron and silicon.

Original languageEnglish
Pages (from-to)351-356
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume980
Publication statusPublished - 2007 Jun 29
Externally publishedYes
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: 2006 Nov 272006 Nov 29

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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