Crystal growth and structural characterizations of Ce-doped Gd9.33(SiO4)6O2 single crystals

Y. Ohgi, H. Kagi, H. Arima, A. Ohta, K. Kamada, A. Yoshikawa, K. Sugiyama

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

A new type of scintillator crystal, Ce-doped Gd9.33(SiO4)6O2 (Ce:GSAP), was grown by the micro-pulling-down (μ-PD) method. Single-crystal structural analysis coupled with X-ray absorption near-edge structure (XANES) analysis clearly implied the preference of Ce3+ at the 6h site in the Ce:GSAP structure. The X-ray excited luminescence spectra showed a peak around 410 nm originating from the Ce3+ 5d-4f transition. The corresponding decay time estimated was about 25 ns.

Original languageEnglish
Pages (from-to)526-529
Number of pages4
JournalJournal of Crystal Growth
Volume311
Issue number3
DOIs
Publication statusPublished - 2009 Jan 15

Keywords

  • A1. Ce-doping
  • A1. Crystal structure
  • A1. Oxidation state
  • A1. XANES
  • A2. μ-PD method
  • B2. Scintillator materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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