Abstract
A new type of scintillator crystal, Ce-doped Gd9.33(SiO4)6O2 (Ce:GSAP), was grown by the micro-pulling-down (μ-PD) method. Single-crystal structural analysis coupled with X-ray absorption near-edge structure (XANES) analysis clearly implied the preference of Ce3+ at the 6h site in the Ce:GSAP structure. The X-ray excited luminescence spectra showed a peak around 410 nm originating from the Ce3+ 5d-4f transition. The corresponding decay time estimated was about 25 ns.
Original language | English |
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Pages (from-to) | 526-529 |
Number of pages | 4 |
Journal | Journal of Crystal Growth |
Volume | 311 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2009 Jan 15 |
Keywords
- A1. Ce-doping
- A1. Crystal structure
- A1. Oxidation state
- A1. XANES
- A2. μ-PD method
- B2. Scintillator materials
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry