Crystal growth and structural characterizations of Ce-doped Gd9.33(SiO4)6O2 single crystals

Y. Ohgi; H. Kagi; H. Arima; A. Ohta; K. Kamada; A. Yoshikawa; K. Sugiyama

doi:10.1016/j.jcrysgro.2008.09.148

Crystal growth and structural characterizations of Ce-doped Gd_9.33(SiO₄)₆O₂ single crystals

Y. Ohgi, H. Kagi, H. Arima, A. Ohta, K. Kamada, A. Yoshikawa, K. Sugiyama

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

A new type of scintillator crystal, Ce-doped Gd_9.33(SiO₄)₆O₂ (Ce:GSAP), was grown by the micro-pulling-down (μ-PD) method. Single-crystal structural analysis coupled with X-ray absorption near-edge structure (XANES) analysis clearly implied the preference of Ce³⁺ at the 6h site in the Ce:GSAP structure. The X-ray excited luminescence spectra showed a peak around 410 nm originating from the Ce³⁺ 5d-4f transition. The corresponding decay time estimated was about 25 ns.

Original language	English
Pages (from-to)	526-529
Number of pages	4
Journal	Journal of Crystal Growth
Volume	311
Issue number	3
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.09.148
Publication status	Published - 2009 Jan 15

Keywords

A1. Ce-doping
A1. Crystal structure
A1. Oxidation state
A1. XANES
A2. μ-PD method
B2. Scintillator materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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abstract = "A new type of scintillator crystal, Ce-doped Gd9.33(SiO4)6O2 (Ce:GSAP), was grown by the micro-pulling-down (μ-PD) method. Single-crystal structural analysis coupled with X-ray absorption near-edge structure (XANES) analysis clearly implied the preference of Ce3+ at the 6h site in the Ce:GSAP structure. The X-ray excited luminescence spectra showed a peak around 410 nm originating from the Ce3+ 5d-4f transition. The corresponding decay time estimated was about 25 ns.",

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AU - Ohgi, Y.

AU - Kagi, H.

AU - Arima, H.

AU - Ohta, A.

AU - Kamada, K.

AU - Yoshikawa, A.

AU - Sugiyama, K.

PY - 2009/1/15

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