Crystal growth and structural characterizations of Ce-doped Gd9.33(SiO4)6O2 single crystals

Y. Ohgi; H. Kagi; Hiroshi Arima; A. Ohta; K. Kamada; A. Yoshikawa; K. Sugiyama

doi:10.1016/j.jcrysgro.2008.09.148

Crystal growth and structural characterizations of Ce-doped Gd_9.33(SiO₄)₆O₂ single crystals

Y. Ohgi, H. Kagi, Hiroshi Arima, A. Ohta, K. Kamada, A. Yoshikawa, K. Sugiyama

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

A new type of scintillator crystal, Ce-doped Gd_9.33(SiO₄)₆O₂ (Ce:GSAP), was grown by the micro-pulling-down (μ-PD) method. Single-crystal structural analysis coupled with X-ray absorption near-edge structure (XANES) analysis clearly implied the preference of Ce³⁺ at the 6h site in the Ce:GSAP structure. The X-ray excited luminescence spectra showed a peak around 410 nm originating from the Ce³⁺ 5d-4f transition. The corresponding decay time estimated was about 25 ns.

Original language	English
Pages (from-to)	526-529
Number of pages	4
Journal	Journal of Crystal Growth
Volume	311
Issue number	3
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.09.148
Publication status	Published - 2009 Jan 15

Keywords

A1. Ce-doping
A1. Crystal structure
A1. Oxidation state
A1. XANES
A2. μ-PD method
B2. Scintillator materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2008.09.148

Cite this

@article{803a55d2993e4255a29ba818bd21f7da,

title = "Crystal growth and structural characterizations of Ce-doped Gd9.33(SiO4)6O2 single crystals",

abstract = "A new type of scintillator crystal, Ce-doped Gd9.33(SiO4)6O2 (Ce:GSAP), was grown by the micro-pulling-down (μ-PD) method. Single-crystal structural analysis coupled with X-ray absorption near-edge structure (XANES) analysis clearly implied the preference of Ce3+ at the 6h site in the Ce:GSAP structure. The X-ray excited luminescence spectra showed a peak around 410 nm originating from the Ce3+ 5d-4f transition. The corresponding decay time estimated was about 25 ns.",

keywords = "A1. Ce-doping, A1. Crystal structure, A1. Oxidation state, A1. XANES, A2. μ-PD method, B2. Scintillator materials",

author = "Y. Ohgi and H. Kagi and Hiroshi Arima and A. Ohta and K. Kamada and A. Yoshikawa and K. Sugiyama",

year = "2009",

month = jan,

day = "15",

doi = "10.1016/j.jcrysgro.2008.09.148",

language = "English",

volume = "311",

pages = "526--529",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "3",

}

TY - JOUR

T1 - Crystal growth and structural characterizations of Ce-doped Gd9.33(SiO4)6O2 single crystals

AU - Ohgi, Y.

AU - Kagi, H.

AU - Arima, Hiroshi

AU - Ohta, A.

AU - Kamada, K.

AU - Yoshikawa, A.

AU - Sugiyama, K.

PY - 2009/1/15

Y1 - 2009/1/15

N2 - A new type of scintillator crystal, Ce-doped Gd9.33(SiO4)6O2 (Ce:GSAP), was grown by the micro-pulling-down (μ-PD) method. Single-crystal structural analysis coupled with X-ray absorption near-edge structure (XANES) analysis clearly implied the preference of Ce3+ at the 6h site in the Ce:GSAP structure. The X-ray excited luminescence spectra showed a peak around 410 nm originating from the Ce3+ 5d-4f transition. The corresponding decay time estimated was about 25 ns.

AB - A new type of scintillator crystal, Ce-doped Gd9.33(SiO4)6O2 (Ce:GSAP), was grown by the micro-pulling-down (μ-PD) method. Single-crystal structural analysis coupled with X-ray absorption near-edge structure (XANES) analysis clearly implied the preference of Ce3+ at the 6h site in the Ce:GSAP structure. The X-ray excited luminescence spectra showed a peak around 410 nm originating from the Ce3+ 5d-4f transition. The corresponding decay time estimated was about 25 ns.

KW - A1. Ce-doping

KW - A1. Crystal structure

KW - A1. Oxidation state

KW - A1. XANES

KW - A2. μ-PD method

KW - B2. Scintillator materials

UR - http://www.scopus.com/inward/record.url?scp=59649130478&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=59649130478&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2008.09.148

DO - 10.1016/j.jcrysgro.2008.09.148

M3 - Article

AN - SCOPUS:59649130478

VL - 311

SP - 526

EP - 529

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 3

ER -