Crystal growth and scintillation properties of Ce doped Gd 3(Ga,Al) 5O 12 single crystals

Kei Kamada, Takayuki Yanagida, Jan Pejchal, Martin Nikl, Takanori Endo, Kousuke Tsutsumi, Yutaka Fujimoto, Akihiro Fukabori, Akira Yoshikawa

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75 Citations (Scopus)

Abstract

Ce1%, 2% and 3% doped Gd 3(Ga,Al) 5O 12 (GAGG) single crystals were grown by the Cz method. Luminescence and scintillation properties were measured. Light yield change along the growth direction and effects of Ce concentration on scintillation properties in Ce:GAGG were studied. Ce 3+ $ 5d-4f emission within 520-530 nm was observed in the Ce:GAGG crystals. The Ce1%:GAGG sample with 3× 3× 1 size showed the highest light yield of 46000 photon/MeV. The energy resolution was 7.8%@662 keV. With increasing solidification fraction, the LY were decreased. It is proposed that the increase of Ga concentration along the growth direction is the main cause of the decrease of LY. The scintillation decay times were accelerated with increasing Ce concentration in the Ce:GAGG crystals. The scintillation decay times were 92.0 ns, 79.1 ns and 68.3 ns in the Ce1, 2 and 3% GAGG, respectively.

Original languageEnglish
Article number6212487
Pages (from-to)2112-2115
Number of pages4
JournalIEEE Transactions on Nuclear Science
Volume59
Issue number5 PART 2
DOIs
Publication statusPublished - 2012 Jun 13

Keywords

  • Crystals
  • luminescence
  • solid scintillation detectors

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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