Crystal growth and optical properties of CuAl(SxSe1-x)2 alloys

Sho Shirakata; Shigefusa Chichibu; Shigehiro Isomura

doi:10.1143/jjap.36.6645

Crystal growth and optical properties of CuAl(S_xSe_1-x)₂ alloys

Sho Shirakata, Shigefusa Chichibu, Shigehiro Isomura

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Single crystals of CuAl(S_xSe_1-x)₂ alloys have been successfully grown by the chemical vapor transport method. Photoreflectance (PR) and photoluminescence (PL) measurements have been carried out at 77 K. From PR measurements, exciton energies (in eV) at 77 K have been obtained as a function of alloy composition x: E_A = 3.546x + 2.736(1 - x) - 0.35x(1 - x), E_B = 3.709x + 2.849(1 - x) - 0.39x(1 - x), E_C = 3.692x + 3.012(1 - x) - 0.33x(1 - x). PL spectra are dominated by a broad emission band centered at 2.0eV, although weak exciton and edge emission (2.9eV) peaks have been observed for 0.84 ≤ x ≤ 0.96 and 0.68 ≤ x ≤ 0.96. respectively.

Original language	English
Pages (from-to)	6645-6649
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	36
Issue number	11
DOIs	https://doi.org/10.1143/jjap.36.6645
Publication status	Published - 1997 Nov
Externally published	Yes

Keywords

Chalcopyrite semiconductor
Chemical vapor transport
Photoluminescence
Photoreflectance
Single crystal of CuAl(SSe) alloy

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.36.6645

Cite this

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title = "Crystal growth and optical properties of CuAl(SxSe1-x)2 alloys",

abstract = "Single crystals of CuAl(SxSe1-x)2 alloys have been successfully grown by the chemical vapor transport method. Photoreflectance (PR) and photoluminescence (PL) measurements have been carried out at 77 K. From PR measurements, exciton energies (in eV) at 77 K have been obtained as a function of alloy composition x: EA = 3.546x + 2.736(1 - x) - 0.35x(1 - x), EB = 3.709x + 2.849(1 - x) - 0.39x(1 - x), EC = 3.692x + 3.012(1 - x) - 0.33x(1 - x). PL spectra are dominated by a broad emission band centered at 2.0eV, although weak exciton and edge emission (2.9eV) peaks have been observed for 0.84 ≤ x ≤ 0.96 and 0.68 ≤ x ≤ 0.96. respectively.",

keywords = "Chalcopyrite semiconductor, Chemical vapor transport, Photoluminescence, Photoreflectance, Single crystal of CuAl(SSe) alloy",

author = "Sho Shirakata and Shigefusa Chichibu and Shigehiro Isomura",

year = "1997",

month = nov,

doi = "10.1143/jjap.36.6645",

language = "English",

volume = "36",

pages = "6645--6649",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "11",

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T1 - Crystal growth and optical properties of CuAl(SxSe1-x)2 alloys

AU - Shirakata, Sho

AU - Chichibu, Shigefusa

AU - Isomura, Shigehiro

PY - 1997/11

Y1 - 1997/11

N2 - Single crystals of CuAl(SxSe1-x)2 alloys have been successfully grown by the chemical vapor transport method. Photoreflectance (PR) and photoluminescence (PL) measurements have been carried out at 77 K. From PR measurements, exciton energies (in eV) at 77 K have been obtained as a function of alloy composition x: EA = 3.546x + 2.736(1 - x) - 0.35x(1 - x), EB = 3.709x + 2.849(1 - x) - 0.39x(1 - x), EC = 3.692x + 3.012(1 - x) - 0.33x(1 - x). PL spectra are dominated by a broad emission band centered at 2.0eV, although weak exciton and edge emission (2.9eV) peaks have been observed for 0.84 ≤ x ≤ 0.96 and 0.68 ≤ x ≤ 0.96. respectively.

AB - Single crystals of CuAl(SxSe1-x)2 alloys have been successfully grown by the chemical vapor transport method. Photoreflectance (PR) and photoluminescence (PL) measurements have been carried out at 77 K. From PR measurements, exciton energies (in eV) at 77 K have been obtained as a function of alloy composition x: EA = 3.546x + 2.736(1 - x) - 0.35x(1 - x), EB = 3.709x + 2.849(1 - x) - 0.39x(1 - x), EC = 3.692x + 3.012(1 - x) - 0.33x(1 - x). PL spectra are dominated by a broad emission band centered at 2.0eV, although weak exciton and edge emission (2.9eV) peaks have been observed for 0.84 ≤ x ≤ 0.96 and 0.68 ≤ x ≤ 0.96. respectively.

KW - Chalcopyrite semiconductor

KW - Chemical vapor transport

KW - Photoluminescence

KW - Photoreflectance

KW - Single crystal of CuAl(SSe) alloy

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