Crystal growth and luminescence properties of Yb-doped Gd 3Al2Ga3O12 infra-red scintillator

Akira Suzuki, Shunsuke Kurosawa, Shinji Nagata, Tomoo Yamamura, Jan Pejchal, Akihiro Yamaji, Yuui Yokota, Kenji Shirasaki, Yoshiya Homma, Dai Aoki, Tatsuo Shikama, Akira Yoshikawa

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

1-mol%-Yb-doped Gd3Al2Ga3O12 infra-red scintillator crystal has been studied as a novel implantable radiation monitor in radiation therapy. Powder X-ray diffraction measurement and chemical analysis with a field emission scanning microscope and wavelength dispersive spectrometer determined its garnet structure and average chemical composition of Yb0.03±0.01Gd2.99±0.07Al 2.21±0.08Ga2.64±0.09O 12.10±0.09. Transmittance measurements reached high values of approximately 70% in the human body transparency region between 650 to 1200 nm. Photoluminescence peaks were detected around 970 and 1030 nm under the 940 nm excitation with a Xe lamp. Infra-red scintillation emissions were clearly observed around 970 and 1030 nm due to Yb3+ 4f-4f transitions under X-ray excitation. Therefore, these results suggest that Yb-doped Gd 3Al2Ga3O12 might be used as an infra-red scintillator material.

Original languageEnglish
Pages (from-to)1484-1487
Number of pages4
JournalOptical Materials
Volume36
Issue number9
DOIs
Publication statusPublished - 2014 Jul

Keywords

  • Bulk crystal
  • Infra-red scintillator
  • Radiation therapy
  • Yb:GAGG

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Computer Science(all)
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Crystal growth and luminescence properties of Yb-doped Gd <sub>3</sub>Al<sub>2</sub>Ga<sub>3</sub>O<sub>12</sub> infra-red scintillator'. Together they form a unique fingerprint.

Cite this