Crystal growth and luminescence properties of Tm:BaF2 single crystals

Naoto Abe, Yuui Yokota, Takayuki Yanagida, Jan Pejchal, Fumiko Nara, Noriaki Kawaguchi, Kentaro Fukuda, Martin Nikl, Akira Yoshikawa

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

BaF2 is an intensively studied scintillator for the detection of gamma radiation due to its relatively high stopping power, radiation hardness and extremely fast response. BaF2 possesses the fast cross-luminescence component at 195 and 220nm with a lifetime of several hundred picoseconds. However, this component coexists with slow one at 310nm related to the self-trapped exciton (STE). In our present study, we focused on BaF 2 host material and introduced the Tm3+ (activator) 5d-4f vacuum ultraviolet (VUV) luminescence center to suppress the STE luminescence. Tm:BaF2 single crystals were successfully grown by the micro-pulling-down (μ-PD) method with up to 10mol% of Tm. The STE emission intensity decreased with increasing Tm concentration. Tm3+ 5d-4f emission was observed while cross-luminescence was decreased at higher Tm concentrations.

Original languageEnglish
Article number022601
JournalJapanese journal of applied physics
Volume49
Issue number2 Part 1
DOIs
Publication statusPublished - 2010 Feb

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint

Dive into the research topics of 'Crystal growth and luminescence properties of Tm:BaF<sub>2</sub> single crystals'. Together they form a unique fingerprint.

Cite this