Crystal growth and electromechanical properties of A1 substituted langasite (La 3 Ga 5-x Al x SiO 14 )

M. Kumatoriya, H. Sato, J. Nakanishi, T. Fujii, Michio Kadota, Y. Sakabe

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28 Citations (Scopus)

Abstract

Al-substituted langasite (La 3 Ga 5-x Al x SiO 14 ) single crystals up to x = 0.9 have been grown by the Czochralski method. The effective segregation coefficient (k eff ) of A1 in langasite was estimated to be between 1.03 and 1.07. X-ray structural analysis indicated that A1 occupied the octahedral and the two kinds of tetrahedral sites in the crystal lattice. The piezoelectricity of A1-substituted langasite was also compared with that of langasite. By A1 substitution, while the piezoelectric constant |d 11 \ became slightly larger, d 14 was smaller. The electromechanical coupling factors (k 12 , k 25 and k 26 ) became larger. It was found that A1 substitution of langasite created a material with preferred electromechanical properties applicable to the next generation of advanced digital communication systems.

Original languageEnglish
Pages (from-to)289-293
Number of pages5
JournalJournal of Crystal Growth
Volume229
Issue number1
DOIs
Publication statusPublished - 2001 Jul 2

Keywords

  • A1. Characterization
  • A2. Czochralski method
  • A2. Single crystal growth
  • B1. Oxides
  • B2. Piezoelectric materials
  • B3. Filters

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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