TY - JOUR
T1 - Crystal growth and characterization of gallium oxynitride nanowires grown on seed crystals
AU - Masubuchi, Yuji
AU - Yamaoka, Ryohei
AU - Motohashi, Teruki
AU - Kirihara, Kazuhiko
AU - Lee, Woong
AU - Watanabe, Kentaro
AU - Sekiguchi, Takashi
AU - Kikkawa, Shinichi
N1 - Funding Information:
This research was partly supported by a Grant-in-Aid for Scientific Research on Priority Areas (no. 22015001 ) from the Ministry of Education, Culture, Sports, Science, and Technology (MEXT) of Japan and for Exploratory Research (no. 236551388 ) from the Japan Society for the Promotion of Science (JSPS). Y.M. acknowledges financial support from the Global COE Program (Project no. B01: “Catalysis as the basis for innovation in materials science”) from MEXT of Japan.
PY - 2011/12/15
Y1 - 2011/12/15
N2 - Nanowires of gallium oxynitride with wurtzite type structure were grown using seed crystals obtained by ammonia nitridation of an amorphous gallium oxide precursor containing 3 at% nickel additive. The seed crystals on a silica substrate were annealed with the amorphous gallium oxide precursor under ammonia flow to grow gallium oxynitride nanowires. The nanowires grew to lengths of about 150 μm along the seed crystals parallel to the hexagonal c-plane at 750 and 800 °C but they did not grow in the lateral direction. When the growth temperature was increased above 900 °C, the growth direction gradually changed to become parallel with the c-axis with a copresenting of gallium-nitride-like crystals. Room-temperature cathodoluminescence spectra of nanowires grown at 800 °C exhibited strong blue emission at 2.69 eV along with weak band-edge emission at 3.39 eV, similar to those of GaN. The latter emission was intense for nanowires grown at 1000 °C, which had an improved crystallinity and a higher nitride/oxide ion ratio. Nanowires grown at 750 and 900 °C exhibited persistent photoconductivity under UV irradiation at 393 nm.
AB - Nanowires of gallium oxynitride with wurtzite type structure were grown using seed crystals obtained by ammonia nitridation of an amorphous gallium oxide precursor containing 3 at% nickel additive. The seed crystals on a silica substrate were annealed with the amorphous gallium oxide precursor under ammonia flow to grow gallium oxynitride nanowires. The nanowires grew to lengths of about 150 μm along the seed crystals parallel to the hexagonal c-plane at 750 and 800 °C but they did not grow in the lateral direction. When the growth temperature was increased above 900 °C, the growth direction gradually changed to become parallel with the c-axis with a copresenting of gallium-nitride-like crystals. Room-temperature cathodoluminescence spectra of nanowires grown at 800 °C exhibited strong blue emission at 2.69 eV along with weak band-edge emission at 3.39 eV, similar to those of GaN. The latter emission was intense for nanowires grown at 1000 °C, which had an improved crystallinity and a higher nitride/oxide ion ratio. Nanowires grown at 750 and 900 °C exhibited persistent photoconductivity under UV irradiation at 393 nm.
KW - A2. Growth from vapor
KW - A2. Seed crystals
KW - B1. Gallium compounds
KW - B1. Nanomaterials
KW - B1. Oxynitride
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U2 - 10.1016/j.jcrysgro.2011.10.008
DO - 10.1016/j.jcrysgro.2011.10.008
M3 - Article
AN - SCOPUS:81855170106
SN - 0022-0248
VL - 337
SP - 87
EP - 92
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -