Cryogenic operation of double-gate FinFET and demonstration of analog circuit at 4.2K

S. O'Uchi, K. Endo, M. Maezawa, T. Nakagawa, H. Ota, Y. X. Liu, T. Matsukawa, Y. Ishikawa, J. Tsukada, H. Yamauchi, W. Mizubayashi, S. Migita, Y. Morita, T. Sekigawa, H. Koike, K. Sakamoto, M. Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Performance of a double-gate (DG) FinFET in the cryogenic environment is discussed based on measurements and simulation. It was found that the DG FinFET has an excellent immunity to the kink effect in the cryogenic environment. Our physics-based compact model reproduced the measured I-V characteristics. The successful demonstration of an opamp consisting of the DG FinFETs at 4.2 K is also presented.

Original languageEnglish
Title of host publication2012 IEEE International SOI Conference, SOI 2012
DOIs
Publication statusPublished - 2012 Dec 1
Externally publishedYes
Event2012 IEEE International SOI Conference, SOI 2012 - Napa, CA, United States
Duration: 2012 Oct 12012 Oct 4

Publication series

NameProceedings - IEEE International SOI Conference
ISSN (Print)1078-621X

Other

Other2012 IEEE International SOI Conference, SOI 2012
CountryUnited States
CityNapa, CA
Period12/10/112/10/4

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    O'Uchi, S., Endo, K., Maezawa, M., Nakagawa, T., Ota, H., Liu, Y. X., Matsukawa, T., Ishikawa, Y., Tsukada, J., Yamauchi, H., Mizubayashi, W., Migita, S., Morita, Y., Sekigawa, T., Koike, H., Sakamoto, K., & Masahara, M. (2012). Cryogenic operation of double-gate FinFET and demonstration of analog circuit at 4.2K. In 2012 IEEE International SOI Conference, SOI 2012 [6404376] (Proceedings - IEEE International SOI Conference). https://doi.org/10.1109/SOI.2012.6404376