TY - JOUR
T1 - Cross-slip in GaAs and InP at elevated temperatures
AU - Yonenaga, I.
AU - Suzuki, T.
PY - 2000/8
Y1 - 2000/8
N2 - Slip lines on GaAs and InP crystals plastically deformed up to the lower yield point at temperatures around 700 K are compared with similar observations on Si. The slip lines in GaAs and InP differ from those in Si in two aspects, namely the primary slip lines are wavy and the non-primary slip lines are long and straight. The former are similar to those found in crystals deformed at low temperatures (below 400 K), being common among III-V compounds, and suggests of glide motion of undissociated screw dislocations. The operation processes of the non-primary slips are discussed with an X-ray topographic analysis of GaAs.
AB - Slip lines on GaAs and InP crystals plastically deformed up to the lower yield point at temperatures around 700 K are compared with similar observations on Si. The slip lines in GaAs and InP differ from those in Si in two aspects, namely the primary slip lines are wavy and the non-primary slip lines are long and straight. The former are similar to those found in crystals deformed at low temperatures (below 400 K), being common among III-V compounds, and suggests of glide motion of undissociated screw dislocations. The operation processes of the non-primary slips are discussed with an X-ray topographic analysis of GaAs.
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U2 - 10.1080/09500830050110431
DO - 10.1080/09500830050110431
M3 - Article
AN - SCOPUS:0034256162
SN - 0950-0839
VL - 80
SP - 511
EP - 518
JO - Philosophical Magazine Letters
JF - Philosophical Magazine Letters
IS - 8
ER -