Slip lines on GaAs and InP crystals plastically deformed up to the lower yield point at temperatures around 700 K are compared with similar observations on Si. The slip lines in GaAs and InP differ from those in Si in two aspects, namely the primary slip lines are wavy and the non-primary slip lines are long and straight. The former are similar to those found in crystals deformed at low temperatures (below 400 K), being common among III-V compounds, and suggests of glide motion of undissociated screw dislocations. The operation processes of the non-primary slips are discussed with an X-ray topographic analysis of GaAs.
ASJC Scopus subject areas
- Condensed Matter Physics