Cross-slip in GaAs and InP at elevated temperatures

I. Yonenaga, T. Suzuki

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Slip lines on GaAs and InP crystals plastically deformed up to the lower yield point at temperatures around 700 K are compared with similar observations on Si. The slip lines in GaAs and InP differ from those in Si in two aspects, namely the primary slip lines are wavy and the non-primary slip lines are long and straight. The former are similar to those found in crystals deformed at low temperatures (below 400 K), being common among III-V compounds, and suggests of glide motion of undissociated screw dislocations. The operation processes of the non-primary slips are discussed with an X-ray topographic analysis of GaAs.

Original languageEnglish
Pages (from-to)511-518
Number of pages8
JournalPhilosophical Magazine Letters
Volume80
Issue number8
DOIs
Publication statusPublished - 2000 Aug 1

ASJC Scopus subject areas

  • Condensed Matter Physics

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