Cross-sectional TEM observation of process-induced defects in heavily arsenic-diffused silicon layers

Shoichi Hirota, Masayasu Miyake, Satoshi Nakayama, Eisuke Arai, Junichi Murota

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9 Citations (Scopus)


Heavily arsenic-diffused silicon layers formed using doped polysilicon diffusion source and arsenic ion implantation are investigated by cross-sectional TEM observation. By comparing depth distribution of process-induced defects observed by cross-sectional TEM with arsenic depth profiles measured by neutron activation analysis, it is found that dislocation loops are generated in the arsenic concentration region above 1-2 x 1020 cm-3 by low-temperature heat-treatment, and that density of the dislocation loops changes reversibly with change of heat-treatment temperature, irrespective of the diffusion source. These results and data on electrically inactive arsenic atoms indicate that dislocation loop generation occurs together with electrically inactive arsenic atom formation. This suggests that dislocation loop generation is caused by the decrease in solid solubility of arsenic in silicon.

Original languageEnglish
Pages (from-to)318-322
Number of pages5
JournalJournal of the Electrochemical Society
Issue number1
Publication statusPublished - 1990 Jan
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


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