Cross-sectional scanning tunneling microscopy on cleaved Si(111): Observation of novel reconstruction and structural and electrical properties of MOS interface

Tadahiro Komeda, Shangjr Gwo, Hiroshi Tokumoto

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Cross-sectional scanning tunneling microscopy (XSTM) measurements revealed two types of reconstructions on Si(111) surfaces depending on the cleaving conditions. The first one is a 2 × 1 structure consistent with previous reports. The second one is a novel 8 ×× 1 structure, which shows a missing-row structure where one row is missing in every four rows in the 2×1 structure. We propose a model for the missing-row reconstruction seen on the Si(110) surface. XSTM observation of the metal-oxide-semiconductor (MOS) interface structure clearly showed a fractured metal layer and cleaved Si areas which demonstrated the possibility of observing the interface with atomic resolution. Scanning tunneling spectroscopy (STS) measurement of the Si part showed systematic shifts of the spectra with the application of bias voltage between the metal and the Si. which agreed well with the expected band bending in the Si.

Original languageEnglish
Pages (from-to)3724-3729
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number6 SUPPL. B
DOIs
Publication statusPublished - 1996 Jun
Externally publishedYes

Keywords

  • Band bending
  • Cross-sectional STM
  • Metal-oxide-semiconductor (MOS) interface
  • Scanning tunneling microscopy (STM)
  • Si cleaving
  • Si(111)-2 × 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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