Cross-sectional potential profile across a BaSi2 pn junction by Kelvin probe force microscopy

Daichi Tsukahara, Masakazu Baba, Kentaro Watanabe, Takashi Kimura, Kosuke O. Hara, Weijie Du, Noritaka Usami, Kaoru Toko, Takashi Sekiguchi, Takashi Suemasu

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5 Citations (Scopus)


We grow a boron (B)-doped BaSi2 (0.7 μm)/undoped n-BaSi2 (1.7 μm) layered structure on a p-Si(111) substrate by molecular beam epitaxy, and observe the cross-sectional potential profile across the junction by Kelvin probe force microscopy (KFM). The potential increases when the KFM tip is moved from the B-doped BaSi2 to the n-BaSi2, and decreases in the p-Si. Inflection points are clearly observed in the potential profile at the Bdoped BaSi2/n-BaSi2 and n-BaSi2/p-Si interfaces. Secondary ion mass spectrometry reveals that B atoms scarcely diffuse to the n-BaSi2 layer. These results show the formation of a pn junction at the B-doped BaSi2/n-BaSi2.

Original languageEnglish
Article number030306
JournalJapanese journal of applied physics
Issue number3
Publication statusPublished - 2015 Mar 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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