Cross-sectional potential profile across a BaSi2 pn junction by Kelvin probe force microscopy

Daichi Tsukahara, Masakazu Baba, Kentaro Watanabe, Takashi Kimura, Kosuke O. Hara, Weijie Du, Noritaka Usami, Kaoru Toko, Takashi Sekiguchi, Takashi Suemasu

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4 Citations (Scopus)

Abstract

We grow a boron (B)-doped BaSi2 (0.7 μm)/undoped n-BaSi2 (1.7 μm) layered structure on a p-Si(111) substrate by molecular beam epitaxy, and observe the cross-sectional potential profile across the junction by Kelvin probe force microscopy (KFM). The potential increases when the KFM tip is moved from the B-doped BaSi2 to the n-BaSi2, and decreases in the p-Si. Inflection points are clearly observed in the potential profile at the Bdoped BaSi2/n-BaSi2 and n-BaSi2/p-Si interfaces. Secondary ion mass spectrometry reveals that B atoms scarcely diffuse to the n-BaSi2 layer. These results show the formation of a pn junction at the B-doped BaSi2/n-BaSi2.

Original languageEnglish
Article number030306
JournalJapanese journal of applied physics
Volume54
Issue number3
DOIs
Publication statusPublished - 2015 Mar 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Tsukahara, D., Baba, M., Watanabe, K., Kimura, T., Hara, K. O., Du, W., Usami, N., Toko, K., Sekiguchi, T., & Suemasu, T. (2015). Cross-sectional potential profile across a BaSi2 pn junction by Kelvin probe force microscopy. Japanese journal of applied physics, 54(3), [030306]. https://doi.org/10.7567/JJAP.54.030306