TY - GEN
T1 - Cross-sectional electric field distributions in BaSi2 homo and BaSi2/Si hetero pn junctions
AU - Baba, Masakazu
AU - Watanabe, Kentaro
AU - Hara, Kosuke O.
AU - Sekiguchi, Takashi
AU - Du, Weijie
AU - Takabe, Ryota
AU - Toko, Kaoru
AU - Usami, Noritaka
AU - Suemasu, Takashi
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/12/14
Y1 - 2015/12/14
N2 - Electrical field distributions at the interfaces of p-type and n-type BaSi2 homo junction and n-type BaSi2 and p-type Si heterojunction were evaluated by electron beam induced current (EBIC) technique. It was confirmed from transmission-electron microscopy that p-BaSi2 and n-BaSi2 layer were clearly separated. For the n-BaSi2/p-Si hetero junction, we observed strong electric field at the interface. We consider that the large difference in work function between BaSi2 and Si contributes to this result. On the other hand, for the BaSi2 pn junction, smaller electric field than that at the BaSi2/Si hetero interface was observed. We assumed that heavily B-doped p-BaSi2 was not formed due to not sufficient activation of boron, leading to the smaller electric field than expected. In both cases, the observation of the electric field means that the pn junction was formed at the BaSi2 homo and BaSi2/Si hetero interfaces. Therefore, we succeeded in forming a BaSi2 pn junction; however higher built-in potential is necessary at the junction to achieve high efficiency BaSi2 solar cells.
AB - Electrical field distributions at the interfaces of p-type and n-type BaSi2 homo junction and n-type BaSi2 and p-type Si heterojunction were evaluated by electron beam induced current (EBIC) technique. It was confirmed from transmission-electron microscopy that p-BaSi2 and n-BaSi2 layer were clearly separated. For the n-BaSi2/p-Si hetero junction, we observed strong electric field at the interface. We consider that the large difference in work function between BaSi2 and Si contributes to this result. On the other hand, for the BaSi2 pn junction, smaller electric field than that at the BaSi2/Si hetero interface was observed. We assumed that heavily B-doped p-BaSi2 was not formed due to not sufficient activation of boron, leading to the smaller electric field than expected. In both cases, the observation of the electric field means that the pn junction was formed at the BaSi2 homo and BaSi2/Si hetero interfaces. Therefore, we succeeded in forming a BaSi2 pn junction; however higher built-in potential is necessary at the junction to achieve high efficiency BaSi2 solar cells.
KW - EBIC
KW - MBE
KW - pn junction
KW - silicide
UR - http://www.scopus.com/inward/record.url?scp=84961637112&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84961637112&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2015.7355932
DO - 10.1109/PVSC.2015.7355932
M3 - Conference contribution
AN - SCOPUS:84961637112
T3 - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
BT - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Y2 - 14 June 2015 through 19 June 2015
ER -