Cross-sectional dopant profiling and depletion layer visualization of SiC power double diffused metal-oxide-semiconductor field effect transistor using super-higher-order nonlinear dielectric microscopy

N. Chinone, T. Nakamura, Yasuo Cho

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)

Abstract

The dopant distribution and depletion layer in a cross-section of a SiC double diffused MOSFET (DMOSFET) is visualized using super-higher-order scanning nonlinear dielectric microscopy (SHO-SNDM), which is a form of scanning probe microscopy. Analysis of the data acquired by SHO-SNDM clarifies the dopant distribution in great detail, which is otherwise difficult to detect using conventional scanning capacitance microscopy or scanning microwave microscopy. Moreover, the newly developed SHO-SNDM method enables us to distinguish the n-type, p-type, and depletion layer regions very clearly, and they are found to be consistent with the general DMOSFET structure.

Original languageEnglish
Article number084509
JournalJournal of Applied Physics
Volume116
Issue number8
DOIs
Publication statusPublished - 2014 Jan 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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