Cross sectional CL study of the growth and annihilation of pit type defects in HVPE grown (0001) thick GaN

W. Lee, H. J. Lee, S. H. Park, K. Watanabe, K. Kumagai, T. Yao, J. H. Chang, T. Sekiguchi

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20 Citations (Scopus)

Abstract

The growth and annihilation mechanism of pit type defects in HVPE grown thick GaN films was studied using a cross sectional cathodoluminescence (CL) technique. Two kinds of pit type defects were distinguished by their morphology: the hexagonal V-pit surrounded by {10-11} facets and the U-pit with {10-11} facets having a blunt bottom. It was found that the V-pit originated from different growth rates between (0001) plane and {10-11} facet, and was filled and annihilated by {10-12} facets' growth, namely U-pit generation. The formation of U-pit may play an important role in annihilation of pit type defects.

Original languageEnglish
Pages (from-to)83-87
Number of pages5
JournalJournal of Crystal Growth
Volume351
Issue number1
DOIs
Publication statusPublished - 2012 Jul 15
Externally publishedYes

Keywords

  • A1. Defect
  • A1. Planar defect
  • A3. Hydride vapor phase epitaxy
  • B1. Gallium compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Lee, W., Lee, H. J., Park, S. H., Watanabe, K., Kumagai, K., Yao, T., Chang, J. H., & Sekiguchi, T. (2012). Cross sectional CL study of the growth and annihilation of pit type defects in HVPE grown (0001) thick GaN. Journal of Crystal Growth, 351(1), 83-87. https://doi.org/10.1016/j.jcrysgro.2012.04.016