Cross-point-type spin-transfer-torque magnetoresistive random access memory cell with multi-pillar vertical body channel MOSFET

Taro Sasaki, Tetsuo Endoh

Research output: Contribution to journalArticle

Abstract

In this paper, from the viewpoint of cell size and sensing margin, the impact of a novel cross-point-type one transistor and one magnetic tunnel junction (1T-1MTJ) spin-transfer-torque magnetoresistive random access memory (STT-MRAM) cell with a multi-pillar vertical body channel (BC) MOSFET is shown for high density and wide sensing margin STT-MRAM, with a 10ns writing period and 1.2 V VDD. For that purpose, all combinations of n/p-type MOSFETs and bottom/top-pin MTJs are compared, where the diameter of MTJ (DMTJ) is scaled down from 55 to 15nm and the tunnel magnetoresistance (TMR) ratio is increased from 100 to 200%. The results show that, benefiting from the proposed STT-MRAM cell with no back bias effect, the MTJ with a high TMR ratio (200%) can be used in the design of smaller STT-MRAM cells (over 72.6% cell size reduction), which is a difficult task for conventional planar MOSFET based design.

Original languageEnglish
Article number04FN09
JournalJapanese journal of applied physics
Volume57
Issue number4
DOIs
Publication statusPublished - 2018 Apr

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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