Criticality of the metal-topological insulator transition driven by disorder

Ai Yamakage, Kentaro Nomura, Ken Ichiro Imura, Yoshio Kuramoto

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)


Employing scaling analysis of the localization length, we deduce the critical exponent of the metal-topological insulator transitions induced by disorder. The obtained exponent ν∼2.7 shows no conspicuous deviation from the value established for metal-ordinary insulator transitions in systems of the symplectic class. We investigate the topological phase diagram upon carrier doping to reveal the nature of the so-called topological Anderson insulator (TAI) region. The critical exponent of the metal-TAI transition is also first estimated, shown to be undistinguishable from the above value within the numerical error. By symmetry considerations we determine the explicit form of Rashba spin-orbit coupling in systems of C4v point group symmetry.

Original languageEnglish
Article number205141
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number20
Publication statusPublished - 2013 May 31

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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