TY - JOUR
T1 - Criticality of the metal-topological insulator transition driven by disorder
AU - Yamakage, Ai
AU - Nomura, Kentaro
AU - Imura, Ken Ichiro
AU - Kuramoto, Yoshio
PY - 2013/5/31
Y1 - 2013/5/31
N2 - Employing scaling analysis of the localization length, we deduce the critical exponent of the metal-topological insulator transitions induced by disorder. The obtained exponent ν∼2.7 shows no conspicuous deviation from the value established for metal-ordinary insulator transitions in systems of the symplectic class. We investigate the topological phase diagram upon carrier doping to reveal the nature of the so-called topological Anderson insulator (TAI) region. The critical exponent of the metal-TAI transition is also first estimated, shown to be undistinguishable from the above value within the numerical error. By symmetry considerations we determine the explicit form of Rashba spin-orbit coupling in systems of C4v point group symmetry.
AB - Employing scaling analysis of the localization length, we deduce the critical exponent of the metal-topological insulator transitions induced by disorder. The obtained exponent ν∼2.7 shows no conspicuous deviation from the value established for metal-ordinary insulator transitions in systems of the symplectic class. We investigate the topological phase diagram upon carrier doping to reveal the nature of the so-called topological Anderson insulator (TAI) region. The critical exponent of the metal-TAI transition is also first estimated, shown to be undistinguishable from the above value within the numerical error. By symmetry considerations we determine the explicit form of Rashba spin-orbit coupling in systems of C4v point group symmetry.
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U2 - 10.1103/PhysRevB.87.205141
DO - 10.1103/PhysRevB.87.205141
M3 - Article
AN - SCOPUS:84878578883
VL - 87
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 0163-1829
IS - 20
M1 - 205141
ER -