Critical thickness for the solid phase epitaxy: Si/Sb/Si(001)

Sh Kono; T. Goto; Y. Ogura; T. Abukawa

doi:10.1143/jjap.35.l1211

Critical thickness for the solid phase epitaxy: Si/Sb/Si(001)

Sh Kono, T. Goto, Y. Ogura, T. Abukawa

Division of Inorganic Material Research

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The early stages of solid-phase epitaxial (SPE) formation of Si/Sb/(δ-layer)/Si(001) were studied suing Auger electron spectroscopy. The Auger intensity ratio (Sb MNN)/(Si KLL) was measured as a function of the capping Si layer thickness. We found that there exists a critical capping Si thickness, ≈8-10 Si layers. Below this critical thickness, essentially all Sb atoms are segregated to the surface during the Si capping layer crystallization. Possible causes for this critical thickness are discussed and the need for further study under different SPE conditions is pointed out.

Original language	English
Pages (from-to)	L1211-L1214
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	35
Issue number	9 B
DOIs	https://doi.org/10.1143/jjap.35.l1211
Publication status	Published - 1996

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

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abstract = "The early stages of solid-phase epitaxial (SPE) formation of Si/Sb/(δ-layer)/Si(001) were studied suing Auger electron spectroscopy. The Auger intensity ratio (Sb MNN)/(Si KLL) was measured as a function of the capping Si layer thickness. We found that there exists a critical capping Si thickness, ≈8-10 Si layers. Below this critical thickness, essentially all Sb atoms are segregated to the surface during the Si capping layer crystallization. Possible causes for this critical thickness are discussed and the need for further study under different SPE conditions is pointed out.",

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AU - Kono, Sh

AU - Goto, T.

AU - Ogura, Y.

AU - Abukawa, T.

PY - 1996

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AB - The early stages of solid-phase epitaxial (SPE) formation of Si/Sb/(δ-layer)/Si(001) were studied suing Auger electron spectroscopy. The Auger intensity ratio (Sb MNN)/(Si KLL) was measured as a function of the capping Si layer thickness. We found that there exists a critical capping Si thickness, ≈8-10 Si layers. Below this critical thickness, essentially all Sb atoms are segregated to the surface during the Si capping layer crystallization. Possible causes for this critical thickness are discussed and the need for further study under different SPE conditions is pointed out.

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