Critical thickness for the solid phase epitaxy: Si/Sb/Si(001)

Sh Kono, T. Goto, Y. Ogura, T. Abukawa

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The early stages of solid-phase epitaxial (SPE) formation of Si/Sb/(δ-layer)/Si(001) were studied suing Auger electron spectroscopy. The Auger intensity ratio (Sb MNN)/(Si KLL) was measured as a function of the capping Si layer thickness. We found that there exists a critical capping Si thickness, ≈8-10 Si layers. Below this critical thickness, essentially all Sb atoms are segregated to the surface during the Si capping layer crystallization. Possible causes for this critical thickness are discussed and the need for further study under different SPE conditions is pointed out.

Original languageEnglish
Pages (from-to)L1211-L1214
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume35
Issue number9 B
DOIs
Publication statusPublished - 1996

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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