The early stages of solid-phase epitaxial (SPE) formation of Si/Sb/(δ-layer)/Si(001) were studied suing Auger electron spectroscopy. The Auger intensity ratio (Sb MNN)/(Si KLL) was measured as a function of the capping Si layer thickness. We found that there exists a critical capping Si thickness, ≈8-10 Si layers. Below this critical thickness, essentially all Sb atoms are segregated to the surface during the Si capping layer crystallization. Possible causes for this critical thickness are discussed and the need for further study under different SPE conditions is pointed out.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||9 B|
|Publication status||Published - 1996|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)