TY - JOUR
T1 - Critical thickness for the solid phase epitaxy
T2 - Si/Sb/Si(001)
AU - Kono, Sh
AU - Goto, T.
AU - Ogura, Y.
AU - Abukawa, T.
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 1996
Y1 - 1996
N2 - The early stages of solid-phase epitaxial (SPE) formation of Si/Sb/(δ-layer)/Si(001) were studied suing Auger electron spectroscopy. The Auger intensity ratio (Sb MNN)/(Si KLL) was measured as a function of the capping Si layer thickness. We found that there exists a critical capping Si thickness, ≈8-10 Si layers. Below this critical thickness, essentially all Sb atoms are segregated to the surface during the Si capping layer crystallization. Possible causes for this critical thickness are discussed and the need for further study under different SPE conditions is pointed out.
AB - The early stages of solid-phase epitaxial (SPE) formation of Si/Sb/(δ-layer)/Si(001) were studied suing Auger electron spectroscopy. The Auger intensity ratio (Sb MNN)/(Si KLL) was measured as a function of the capping Si layer thickness. We found that there exists a critical capping Si thickness, ≈8-10 Si layers. Below this critical thickness, essentially all Sb atoms are segregated to the surface during the Si capping layer crystallization. Possible causes for this critical thickness are discussed and the need for further study under different SPE conditions is pointed out.
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U2 - 10.1143/jjap.35.l1211
DO - 10.1143/jjap.35.l1211
M3 - Article
AN - SCOPUS:0030235738
VL - 35
SP - L1211-L1214
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 9 B
ER -