Critical Roles of Decomposition-Shielding Layer Deposited at Low Temperature Governing the Structural and Photoluminescence Properties of Cubic GaN Epilayers Grown on (001) GaAs by Metalorganic Vapor Phase Epitaxy

Mutsumi Sugiyama, Taiki Nosaka, Takeyoshi Onuma, Kiyomi Nakajima, Parhat Ahmet, Toyomi Aoyama, Toyohiro Chikyow, Shigefusa F. Chichibu

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Roles of a thin GaN layer deposited at low temperature (LT-GaN) on (001) GaAs substrates during metalorganic vapor phase epitaxy of cubic (c-) GaN were investigated in terms of crystallographic tilt, photoluminescence (PL) line width, and PL lifetime at room temperature. When the nominal LT-GaN thickness was approximately 5-7 nm, reasonable-quality epilayers were obtained, though distinct voids were formed on the substrate side of the c-GaN/GaAs interface. Lateral epitaxial overgrowth on voids was found in the cross-sectional transmission electron micrographs of those samples, and the epilayers exhibited a smaller tilt. A further decrease in LT-GaN thickness caused a destructive peeling of the epilayer due to thermal decomposition of the substrate. On the other hand, an increase in LT-GaN thickness induced mixing of hexagonal phases. In order to obtain a pure c-GaN film, the substrate decomposition-shielding LT-GaN was verified to have a simultaneous role in transmitting cubic lattice information.

Original languageEnglish
Pages (from-to)106-110
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number1
DOIs
Publication statusPublished - 2004 Jan
Externally publishedYes

Keywords

  • Cubic GaN
  • GaAs substrate
  • Lateral epitaxial overgrowth (LEO)
  • Metalorganic vapor phase epitaxy (MOVPE)
  • Void

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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