Critical role of W deposition condition on spin-orbit torque induced magnetization switching in nanoscale W/CoFeB/MgO

C. Zhang, S. Fukami, K. Watanabe, A. Ohkawara, S. DuttaGupta, H. Sato, F. Matsukura, H. Ohno

Research output: Contribution to journalArticlepeer-review

44 Citations (Scopus)

Abstract

We study the spin-orbit torque induced magnetization switching in W/CoFeB/MgO heterostructures with W deposited under different sputtering conditions. We show that the crystal structure and resistivity of W depend on the employed sputtering conditions. Switching current of nanoscale devices is smaller while effective anisotropy field is larger for the devices with more resistive W channel deposited at lower sputtering power and higher Ar gas pressure. The effective spin Hall angle evaluated from the switching probability varies by a factor of 2-3 depending on the W resistivity controlled by the sputtering conditions.

Original languageEnglish
Article number192405
JournalApplied Physics Letters
Volume109
Issue number19
DOIs
Publication statusPublished - 2016 Nov 7

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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