We have succeeded in preparing c-axis oriented high-Jc YBa 2Cu3Oy films on MgO(100) substrate by the liquid phase epitaxy (LPE) technique. The growth rate was typically about 2 μm/min, which was 10-102 times larger than that by ordinary vapor growth techniques. The film thickness ranged 10-50 μm by choosing the dipping time. The Tc of the best film exceeded 88 K after oxygen annealing, and the transport Jc was 1.1×105 A/cm2 at 77 K and 0 T. In-field Jc's at 77 K and 1.5 T were 2.8×10 4 A/cm2 and 2.0×104 A/cm2 for the B⊥ab plane and B∥ab plane, respectively. In addition, the peak effect of Jc was observed at several tesla for B∥ab plane geometry. Based on the microstructure observed by high resolution transmission electron microscopy, the relevant peak effect is considered to be caused by stacking faults which act as a field induced pinning center.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 1994|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)