Critical currents of YBa2Cu3Oy thick films prepared by liquid phase epitaxial growth

Manabu Yoshida; Takao Nakamoto; Tasuku Kitamura; Ok Bae Hyun; Izumi Hirabayashi; Shoji Tanaka; Akihiro Tsuzuki; Yoshihiro Sugawara; Yuichi Ikuhara

doi:10.1063/1.112895

Critical currents of YBa₂Cu₃O_y thick films prepared by liquid phase epitaxial growth

Manabu Yoshida, Takao Nakamoto, Tasuku Kitamura, Ok Bae Hyun, Izumi Hirabayashi, Shoji Tanaka, Akihiro Tsuzuki, Yoshihiro Sugawara, Yuichi Ikuhara

Research output: Contribution to journal › Article › peer-review

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Abstract

We have succeeded in preparing c-axis oriented high-J_c YBa ₂Cu₃O_y films on MgO(100) substrate by the liquid phase epitaxy (LPE) technique. The growth rate was typically about 2 μm/min, which was 10-10² times larger than that by ordinary vapor growth techniques. The film thickness ranged 10-50 μm by choosing the dipping time. The T_c of the best film exceeded 88 K after oxygen annealing, and the transport J_c was 1.1×10⁵ A/cm² at 77 K and 0 T. In-field J_c's at 77 K and 1.5 T were 2.8×10 ⁴ A/cm² and 2.0×10⁴ A/cm² for the B⊥ab plane and B∥ab plane, respectively. In addition, the peak effect of J_c was observed at several tesla for B∥ab plane geometry. Based on the microstructure observed by high resolution transmission electron microscopy, the relevant peak effect is considered to be caused by stacking faults which act as a field induced pinning center.

Original language	English
Pages (from-to)	1714-1716
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	13
DOIs	https://doi.org/10.1063/1.112895
Publication status	Published - 1994

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{a8f1c0a1ba6d473581cdf36c854f9323,

title = "Critical currents of YBa2Cu3Oy thick films prepared by liquid phase epitaxial growth",

abstract = "We have succeeded in preparing c-axis oriented high-Jc YBa 2Cu3Oy films on MgO(100) substrate by the liquid phase epitaxy (LPE) technique. The growth rate was typically about 2 μm/min, which was 10-102 times larger than that by ordinary vapor growth techniques. The film thickness ranged 10-50 μm by choosing the dipping time. The Tc of the best film exceeded 88 K after oxygen annealing, and the transport Jc was 1.1×105 A/cm2 at 77 K and 0 T. In-field Jc's at 77 K and 1.5 T were 2.8×10 4 A/cm2 and 2.0×104 A/cm2 for the B⊥ab plane and B∥ab plane, respectively. In addition, the peak effect of Jc was observed at several tesla for B∥ab plane geometry. Based on the microstructure observed by high resolution transmission electron microscopy, the relevant peak effect is considered to be caused by stacking faults which act as a field induced pinning center.",

author = "Manabu Yoshida and Takao Nakamoto and Tasuku Kitamura and Hyun, {Ok Bae} and Izumi Hirabayashi and Shoji Tanaka and Akihiro Tsuzuki and Yoshihiro Sugawara and Yuichi Ikuhara",

year = "1994",

doi = "10.1063/1.112895",

language = "English",

volume = "65",

pages = "1714--1716",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "13",

}

TY - JOUR

T1 - Critical currents of YBa2Cu3Oy thick films prepared by liquid phase epitaxial growth

AU - Yoshida, Manabu

AU - Nakamoto, Takao

AU - Kitamura, Tasuku

AU - Hyun, Ok Bae

AU - Hirabayashi, Izumi

AU - Tanaka, Shoji

AU - Tsuzuki, Akihiro

AU - Sugawara, Yoshihiro

AU - Ikuhara, Yuichi

PY - 1994

Y1 - 1994

N2 - We have succeeded in preparing c-axis oriented high-Jc YBa 2Cu3Oy films on MgO(100) substrate by the liquid phase epitaxy (LPE) technique. The growth rate was typically about 2 μm/min, which was 10-102 times larger than that by ordinary vapor growth techniques. The film thickness ranged 10-50 μm by choosing the dipping time. The Tc of the best film exceeded 88 K after oxygen annealing, and the transport Jc was 1.1×105 A/cm2 at 77 K and 0 T. In-field Jc's at 77 K and 1.5 T were 2.8×10 4 A/cm2 and 2.0×104 A/cm2 for the B⊥ab plane and B∥ab plane, respectively. In addition, the peak effect of Jc was observed at several tesla for B∥ab plane geometry. Based on the microstructure observed by high resolution transmission electron microscopy, the relevant peak effect is considered to be caused by stacking faults which act as a field induced pinning center.

AB - We have succeeded in preparing c-axis oriented high-Jc YBa 2Cu3Oy films on MgO(100) substrate by the liquid phase epitaxy (LPE) technique. The growth rate was typically about 2 μm/min, which was 10-102 times larger than that by ordinary vapor growth techniques. The film thickness ranged 10-50 μm by choosing the dipping time. The Tc of the best film exceeded 88 K after oxygen annealing, and the transport Jc was 1.1×105 A/cm2 at 77 K and 0 T. In-field Jc's at 77 K and 1.5 T were 2.8×10 4 A/cm2 and 2.0×104 A/cm2 for the B⊥ab plane and B∥ab plane, respectively. In addition, the peak effect of Jc was observed at several tesla for B∥ab plane geometry. Based on the microstructure observed by high resolution transmission electron microscopy, the relevant peak effect is considered to be caused by stacking faults which act as a field induced pinning center.

UR - http://www.scopus.com/inward/record.url?scp=0000939018&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000939018&partnerID=8YFLogxK

U2 - 10.1063/1.112895

DO - 10.1063/1.112895

M3 - Article

AN - SCOPUS:0000939018

SN - 0003-6951

VL - 65

SP - 1714

EP - 1716

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Critical currents of YBa₂Cu₃O_y thick films prepared by liquid phase epitaxial growth

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