Creation of a new In-based material by laser irradiation of chalcopyrite-type ternary semiconductors

H. Tanino, H. Fujikake, H. Nakanishi

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5 Citations (Scopus)

Abstract

A new material mainly made of In has been created by laser irradiation of chalcopyrite-type ternary semiconductors containing In such as CuInSe 2. The Raman spectra of the created material are always the same independent of the original compounds (CuInS2, CuInSe2, CuInTe2, and AgInSe2). The same spectra could not be produced by laser irradiation of CuGaSe2, AgGaSe2, In metal, or Cu-In alloys. The crystallization of a-Si:H was measured by laser irradiation in the same manner and it was found that CuInSe2 was more stable during laser irradiation than a-Si:H. Hence, CuInSe2 could be a promising candidate for solar cells.

Original languageEnglish
Pages (from-to)3821-3823
Number of pages3
JournalJournal of Applied Physics
Volume74
Issue number6
DOIs
Publication statusPublished - 1993
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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