Abstract
A novel mechanism of the inclination of a photoresist mask based on the experimental evaluation of the change in the quality of the irradiated surface layer of a material was proposed. In this proposed mechanism, the irradiation of oxygen and fluorine radicals generates a very thin degraded surface layer with a high tensile stress and causes the inclination of the mask. It was found that a very thin (approximately 5 nm thick) layer with a high tensile stress appeared after the irradiation of radicals on the surface of the photoresist mask. X-ray photoelectron spectroscopy (XPS) confirmed that irradiation of either of these radicals generates a very thin degraded layer on the photoresist surface.
| Original language | English |
|---|---|
| Article number | 04DA23 |
| Journal | Japanese journal of applied physics |
| Volume | 49 |
| Issue number | 4 PART 2 |
| DOIs | |
| Publication status | Published - 2010 Apr 1 |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Cite this
Kofuji, N., & Miura, H. (2010). Creation of a degraded layer on the surface of photoresist by radical irradiation. Japanese journal of applied physics, 49(4 PART 2), [04DA23]. https://doi.org/10.1143/JJAP.49.04DA23