TY - JOUR
T1 - Creation of a degraded layer on the surface of photoresist by radical irradiation
AU - Kofuji, Naoyuki
AU - Miura, Hideo
PY - 2010/4/1
Y1 - 2010/4/1
N2 - A novel mechanism of the inclination of a photoresist mask based on the experimental evaluation of the change in the quality of the irradiated surface layer of a material was proposed. In this proposed mechanism, the irradiation of oxygen and fluorine radicals generates a very thin degraded surface layer with a high tensile stress and causes the inclination of the mask. It was found that a very thin (approximately 5 nm thick) layer with a high tensile stress appeared after the irradiation of radicals on the surface of the photoresist mask. X-ray photoelectron spectroscopy (XPS) confirmed that irradiation of either of these radicals generates a very thin degraded layer on the photoresist surface.
AB - A novel mechanism of the inclination of a photoresist mask based on the experimental evaluation of the change in the quality of the irradiated surface layer of a material was proposed. In this proposed mechanism, the irradiation of oxygen and fluorine radicals generates a very thin degraded surface layer with a high tensile stress and causes the inclination of the mask. It was found that a very thin (approximately 5 nm thick) layer with a high tensile stress appeared after the irradiation of radicals on the surface of the photoresist mask. X-ray photoelectron spectroscopy (XPS) confirmed that irradiation of either of these radicals generates a very thin degraded layer on the photoresist surface.
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U2 - 10.1143/JJAP.49.04DA23
DO - 10.1143/JJAP.49.04DA23
M3 - Article
AN - SCOPUS:77952686711
VL - 49
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 PART 2
M1 - 04DA23
ER -