Creating novel transport properties in electric double layer field effect transistors based on layered materials

J. T. Ye, M. F. Craciun, M. Koshino, S. Russo, Y. Kasahara, H. T. Yuan, H. Shimotani, A. F. Morpurgo, Y. Iwasa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present a study on the liquid/solid interface, which can be electrostatically doped to a high carrier density (n-10 14 cm -2) by electric-double-layer gating. Using micro-cleavage technique on the layered materials: ZrNCl and graphene, atomically flat channel surfaces can be easily prepared. Intrinsic high carrier density transport regime is accessed at the channel interface of electric double-layer field effect transistor, where novel transport properties are unveiled as the field-induced superconductivity on the ZrNCl with high transition temperature at 15 K, and accessing a high carrier density up to 2×10 14 cm -2 in graphene and its multi-layers.

Original languageEnglish
Title of host publicationNovel Fabrication Methods for Electronic Devices
Pages103-108
Number of pages6
DOIs
Publication statusPublished - 2011
Event2010 MRS Fall Meeting - Boston, MA, United States
Duration: 2010 Nov 292010 Dec 3

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1288
ISSN (Print)0272-9172

Other

Other2010 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period10/11/2910/12/3

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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