Covalent nature in la-silicate gate dielectrics for oxygen vacancy removal

Takamasa Kawanago; Kuniyuki Kakushima; Parhat Ahmet; Kazuo Tsutsui; Akira Nishiyama; Nobuyuki Sugii; Kenji Natori; Takeo Hattori; Hiroshi Iwai

doi:10.1109/LED.2011.2178111

Covalent nature in la-silicate gate dielectrics for oxygen vacancy removal

Takamasa Kawanago, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

This letter focuses on studying the characteristic behavior of oxygen in La-silicate dielectrics by comparison with HfO ₂ dielectrics. V _FB shift of La-silicate caused by oxygen annealing is found to be stable even after reduction annealing unlike with HfO ₂. Moreover, reduced gate leakage current and improved effective mobility of nMOSFETs with La-silicate are observed by oxygen incorporation, suggesting the annihilation of oxygen vacancy. Since the oxygen in La-silicate covalently exists adjacent to the Si atom, stability of oxygen in La-silicate can be understood in terms of strong bonding of covalent nature.

Original language	English
Article number	6129473
Pages (from-to)	423-425
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	3
DOIs	https://doi.org/10.1109/LED.2011.2178111
Publication status	Published - 2012 Mar 1

Keywords

Covalent nature
HfO
La-silicate
high-k gate dielectrics
ionic nature
oxygen vacancy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Kawanago, T., Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., & Iwai, H. (2012). Covalent nature in la-silicate gate dielectrics for oxygen vacancy removal. IEEE Electron Device Letters, 33(3), 423-425. [6129473]. https://doi.org/10.1109/LED.2011.2178111

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abstract = "This letter focuses on studying the characteristic behavior of oxygen in La-silicate dielectrics by comparison with HfO 2 dielectrics. V FB shift of La-silicate caused by oxygen annealing is found to be stable even after reduction annealing unlike with HfO 2. Moreover, reduced gate leakage current and improved effective mobility of nMOSFETs with La-silicate are observed by oxygen incorporation, suggesting the annihilation of oxygen vacancy. Since the oxygen in La-silicate covalently exists adjacent to the Si atom, stability of oxygen in La-silicate can be understood in terms of strong bonding of covalent nature.",

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AU - Ahmet, Parhat

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AU - Nishiyama, Akira

AU - Sugii, Nobuyuki

AU - Natori, Kenji

AU - Hattori, Takeo

AU - Iwai, Hiroshi

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