Abstract
Crossover from simple quantum-well to complex double-heterostructure behavior has been observed by magnetotransport measurements on molecular-beam-epitaxially grown GaAs/AlxGa1-xAs modulation-doped samples. Significant unintentional electric fields (30 kV/cm) are revealed by comparison with self-consistent electronic-structure calculations.
Original language | English |
---|---|
Pages (from-to) | 13439-13442 |
Number of pages | 4 |
Journal | Physical Review B |
Volume | 38 |
Issue number | 18 |
DOIs | |
Publication status | Published - 1988 Jan 1 |
Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics