Coupled monte carlo-energy relaxation analysis of hot carrier light emission in metal oxide semiconductor field effect transistors’s

Hiroyuki Kurino, Hiroyuki Kiba, Hiroki Mori, Shin Yokoyama, Ken Yamaguchi, Mitsumasa Koyanagi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A new two-dimensional device simulator to analyze hot carrier photon emission has been developed. A new calculation algorithm of coupled Monte Carlo energy relaxation analysis is employed to obtain the carrier temperature distribution and the carrier energy distribution function at a fast computation turn around time. The relation between the hot carrier energy and the photon emission characteristics is easily obtained by using this simulator. The simulated results show excellent agreement with the experimental results. It is found from the comparison between the simulated and experimental results that the hot carrier energy distribution function is not described by the Maxwell-Boltzmann distribution.

Original languageEnglish
Pages (from-to)3666-3670
Number of pages5
JournalJapanese journal of applied physics
Volume30
Issue number12
DOIs
Publication statusPublished - 1991 Dec

Keywords

  • Electron energy distribution
  • Energy relaxation analysis
  • MOSFET
  • Monte Carlo simulation
  • New simulation algorithm
  • Photon emission
  • Photon energy distribution

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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