We develop the new two-dimensional device simulator to analyze the hot carrier light emission for the first time. The new calculation algorithm of coupled Monte Carlo-Energy Relaxation analysis is employed to obtain the carrier temperature distribution and the carrier energy distribution at the fast computation turn-around time. We can easily obtain the relation between the hot carrier energy and the light emission characteristics by using this simulator. The excellent agreement between the simulated and experimental results is obtained. It is found from the comparison between the simulated and experimental results that the hot carrier energy distribution can not be described by Maxwell-Boltzmann distribution.
|Number of pages||3|
|Publication status||Published - 1991|
|Event||23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn|
Duration: 1991 Aug 27 → 1991 Aug 29
|Other||23rd International Conference on Solid State Devices and Materials - SSDM '91|
|Period||91/8/27 → 91/8/29|
ASJC Scopus subject areas