Coupled Monte Carlo-Energy Relaxation analysis of hot-carrier light emission in MOSFET's

Hiroyuki Kurino, Hiroyuki Kiba, Hiroki Mori, Shin Yokoyama, Ken Yamaguchi, Mitsumasa Koyanagi

Research output: Contribution to conferencePaperpeer-review

1 Citation (Scopus)

Abstract

We develop the new two-dimensional device simulator to analyze the hot carrier light emission for the first time. The new calculation algorithm of coupled Monte Carlo-Energy Relaxation analysis is employed to obtain the carrier temperature distribution and the carrier energy distribution at the fast computation turn-around time. We can easily obtain the relation between the hot carrier energy and the light emission characteristics by using this simulator. The excellent agreement between the simulated and experimental results is obtained. It is found from the comparison between the simulated and experimental results that the hot carrier energy distribution can not be described by Maxwell-Boltzmann distribution.

Original languageEnglish
Pages459-461
Number of pages3
DOIs
Publication statusPublished - 1991
Event23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn
Duration: 1991 Aug 271991 Aug 29

Other

Other23rd International Conference on Solid State Devices and Materials - SSDM '91
CityYokohama, Jpn
Period91/8/2791/8/29

ASJC Scopus subject areas

  • Engineering(all)

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