Coupled Monte Carlo-Energy Relaxation analysis of hot-carrier light emission in MOSFET's

Hiroyuki Kurino; Hiroyuki Kiba; Hiroki Mori; Shin Yokoyama; Ken Yamaguchi; Mitsumasa Koyanagi

doi:10.7567/ssdm.1991.a-7-2

Coupled Monte Carlo-Energy Relaxation analysis of hot-carrier light emission in MOSFET's

Hiroyuki Kurino, Hiroyuki Kiba, Hiroki Mori, Shin Yokoyama, Ken Yamaguchi, Mitsumasa Koyanagi

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to conference › Paper › peer-review

1 Citation (Scopus)

Abstract

We develop the new two-dimensional device simulator to analyze the hot carrier light emission for the first time. The new calculation algorithm of coupled Monte Carlo-Energy Relaxation analysis is employed to obtain the carrier temperature distribution and the carrier energy distribution at the fast computation turn-around time. We can easily obtain the relation between the hot carrier energy and the light emission characteristics by using this simulator. The excellent agreement between the simulated and experimental results is obtained. It is found from the comparison between the simulated and experimental results that the hot carrier energy distribution can not be described by Maxwell-Boltzmann distribution.

Original language	English
Pages	459-461
Number of pages	3
DOIs	https://doi.org/10.7567/ssdm.1991.a-7-2
Publication status	Published - 1991
Event	23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn Duration: 1991 Aug 27 → 1991 Aug 29

Other

Other	23rd International Conference on Solid State Devices and Materials - SSDM '91
City	Yokohama, Jpn
Period	91/8/27 → 91/8/29

ASJC Scopus subject areas

Engineering(all)

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10.7567/ssdm.1991.a-7-2

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Coupled Monte Carlo-Energy Relaxation analysis of hot-carrier light emission in MOSFET's. / Kurino, Hiroyuki; Kiba, Hiroyuki; Mori, Hiroki; Yokoyama, Shin; Yamaguchi, Ken; Koyanagi, Mitsumasa.

1991. 459-461 Paper presented at 23rd International Conference on Solid State Devices and Materials - SSDM '91, Yokohama, Jpn.

Research output: Contribution to conference › Paper › peer-review

@conference{2035a6a3c02b45eb90fe37677be698da,

title = "Coupled Monte Carlo-Energy Relaxation analysis of hot-carrier light emission in MOSFET's",

abstract = "We develop the new two-dimensional device simulator to analyze the hot carrier light emission for the first time. The new calculation algorithm of coupled Monte Carlo-Energy Relaxation analysis is employed to obtain the carrier temperature distribution and the carrier energy distribution at the fast computation turn-around time. We can easily obtain the relation between the hot carrier energy and the light emission characteristics by using this simulator. The excellent agreement between the simulated and experimental results is obtained. It is found from the comparison between the simulated and experimental results that the hot carrier energy distribution can not be described by Maxwell-Boltzmann distribution.",

author = "Hiroyuki Kurino and Hiroyuki Kiba and Hiroki Mori and Shin Yokoyama and Ken Yamaguchi and Mitsumasa Koyanagi",

year = "1991",

doi = "10.7567/ssdm.1991.a-7-2",

language = "English",

pages = "459--461",

note = "23rd International Conference on Solid State Devices and Materials - SSDM '91 ; Conference date: 27-08-1991 Through 29-08-1991",

}

TY - CONF

T1 - Coupled Monte Carlo-Energy Relaxation analysis of hot-carrier light emission in MOSFET's

AU - Kurino, Hiroyuki

AU - Kiba, Hiroyuki

AU - Mori, Hiroki

AU - Yokoyama, Shin

AU - Yamaguchi, Ken

AU - Koyanagi, Mitsumasa

PY - 1991

Y1 - 1991

N2 - We develop the new two-dimensional device simulator to analyze the hot carrier light emission for the first time. The new calculation algorithm of coupled Monte Carlo-Energy Relaxation analysis is employed to obtain the carrier temperature distribution and the carrier energy distribution at the fast computation turn-around time. We can easily obtain the relation between the hot carrier energy and the light emission characteristics by using this simulator. The excellent agreement between the simulated and experimental results is obtained. It is found from the comparison between the simulated and experimental results that the hot carrier energy distribution can not be described by Maxwell-Boltzmann distribution.

AB - We develop the new two-dimensional device simulator to analyze the hot carrier light emission for the first time. The new calculation algorithm of coupled Monte Carlo-Energy Relaxation analysis is employed to obtain the carrier temperature distribution and the carrier energy distribution at the fast computation turn-around time. We can easily obtain the relation between the hot carrier energy and the light emission characteristics by using this simulator. The excellent agreement between the simulated and experimental results is obtained. It is found from the comparison between the simulated and experimental results that the hot carrier energy distribution can not be described by Maxwell-Boltzmann distribution.

UR - http://www.scopus.com/inward/record.url?scp=0025724511&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025724511&partnerID=8YFLogxK

U2 - 10.7567/ssdm.1991.a-7-2

DO - 10.7567/ssdm.1991.a-7-2

M3 - Paper

AN - SCOPUS:0025724511

SP - 459

EP - 461

T2 - 23rd International Conference on Solid State Devices and Materials - SSDM '91

Y2 - 27 August 1991 through 29 August 1991

ER -

Coupled Monte Carlo-Energy Relaxation analysis of hot-carrier light emission in MOSFET's

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