Coulomb expansion of a van der Waals C60 solid film

Qikun Xue, Jianlong Li, Mu Sun, Hua Lu, T. Hashizume, Y. Hasegawa, K. Ohno, Zhiqiang Li, Y. Kawazoe, T. Sakurai, H. Kamiyama, H. Shinohara

Research output: Contribution to journalArticlepeer-review


Scanning tunneling microscopy study revealed a van der Waals C60 solid film with 13% room-temperature lattice expansion on the GaAs(001) 2 x 4 surface. The mechanism involves fundamental Coulomb interaction due to charge transfer from the GaAs substrate. Theoretical calculation determines the charge transfer to be 1.76 electrons per C60 molecule. Oriented at its (110) crystallographic axis this film also distinguishes itself from those formed on all other semiconductor and metal substrates where only the low-energy (111) hexagonal packing of C60 molecules was developed. It is shown that this is due to the one-dimensional confinement effect of the anisotropic substrate, which may have the prospect of controlling crystal growth.

Original languageEnglish
Pages (from-to)1224-1232
Number of pages9
JournalScience in China, Series A: Mathematics, Physics, Astronomy
Issue number11
Publication statusPublished - 2000 Nov
Externally publishedYes


  • C
  • Charge transfer
  • Coulomb interaction
  • Molecular beam epitaxy
  • Scanning tunneling microscopy

ASJC Scopus subject areas

  • Mathematics(all)

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