Coulomb blockade properties of 4-gated quantum dot

Shinichi Amaha, Tsuyoshi Hatano, Satoshi Sasaki, Toshihiro Kubo, Yasuhiro Tokura, Seigo Tarucha

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We fabricated a few electron vertical quantum dot (QD) device having four separate gate electrodes and characterized the electronic properties. In this device, geometrical symmetry in the confining potential for the QD, that is, orbital degeneracy for the QD electronic states can be tuned by adjusting the voltages applied to the four gates. It is then necessary to precisely characterize the performance of each gate. We use a nonlinear single electron tunneling spectroscopy technique to characterize the gate performances and apply a capacitance network model for this device to reproduce the observed gate performances.

Original languageEnglish
Title of host publicationMS+S 2006 - Controllable Quantum States
Subtitle of host publicationMesoscopic Superconductivity and Spintronics, Proceedings of the International Symposium
PublisherWorld Scientific Publishing Co. Pte Ltd
Pages191-196
Number of pages6
ISBN (Print)9812814612, 9789812814616
DOIs
Publication statusPublished - 2008 Jan 1
Event4th International Symposium on Mesoscopic Superconductivity and Spintronics, MS+S 2006 - Atsugi, Japan
Duration: 2006 Feb 272006 Mar 2

Publication series

NameMS+S 2006 - Controllable Quantum States: Mesoscopic Superconductivity and Spintronics, Proceedings of the International Symposium

Other

Other4th International Symposium on Mesoscopic Superconductivity and Spintronics, MS+S 2006
CountryJapan
CityAtsugi
Period06/2/2706/3/2

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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