Corrosion resistance of aluminum nitride as semiconductor equipment parts studied by micro-Raman spectroscopy

Hirotaka Fujimori, Yoji Tamura, Akira Harita, Koji Ioku, Masato Kakihana, Masahiro Yoshimura, Seishi Goto

    Research output: Contribution to journalArticlepeer-review

    3 Citations (Scopus)


    A micro-Raman spectroscopic investigation has been performed to observe structural disorder in each grain of aluminum nitride ceramics as semiconductor equipment parts. A selective thermal oxidation treatment normalizes a different rate of a corrosion reaction depending on the crystal face and consequently improves the corrosion resistance. Upon thermal oxidation treatment, line widths of Raman bands increased more in grains including mainly crystals with (100) preferred orientation than in those of (002), indicating that (100) faces oxidize preferentially rather than (002) faces. According to Raman shift from the oxidized sample, oxidation induces residual compressive stress for grains including a large number of (100) prefer-oriented crystals. On fluorination of the oxidized sample, no increase of line widths was observed in both kinds of grains, suggesting that prior anisotropic thermal oxidation treatment of (100) faces, which are more sensitive to corrosion than (002) faces, inhibits the progress of corrosion.

    Original languageEnglish
    Pages (from-to)935-938
    Number of pages4
    JournalJournal of the Ceramic Society of Japan
    Issue number1300
    Publication statusPublished - 2003 Dec


    • Aluminum nitride
    • Corrosion resistance
    • Micro-Raman
    • Semiconductor equipment parts

    ASJC Scopus subject areas

    • Ceramics and Composites
    • Chemistry(all)
    • Condensed Matter Physics
    • Materials Chemistry


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