Correlative analysis between characteristics of 30-nm L G FinFETs and SRAM performance

Kazuhiko Endo; Shin Ichi O'Uchi; Yuki Ishikawa; Yongxun Liu; Takashi Matsukawa; Kunihiro Sakamoto; Junichi Tsukada; Hiromi Yamauchi; Meishoku Masahara

doi:10.1109/IEDM.2011.6131660

Correlative analysis between characteristics of 30-nm L _G FinFETs and SRAM performance

Kazuhiko Endo, Shin Ichi O'Uchi, Yuki Ishikawa, Yongxun Liu, Takashi Matsukawa, Kunihiro Sakamoto, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

SRAM cells with 30-nm LG FinFETs have been successfully fabricated and the correlation between the characteristics of the FinFETs and the SRAM performance are precisely studied. By investigating an effect of the V _th variation to the static noise margin (SNM) of two different memory states of the storage node, it is revealed that the V _th variations of the pull-up, pull-down, and pass-gate transistors correlate with the SNM and this correlation strongly depends on the memory state.

Original language	English
Title of host publication	2011 International Electron Devices Meeting, IEDM 2011
DOIs	https://doi.org/10.1109/IEDM.2011.6131660
Publication status	Published - 2011 Dec 1
Externally published	Yes
Event	2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States Duration: 2011 Dec 5 → 2011 Dec 7

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2011 IEEE International Electron Devices Meeting, IEDM 2011
Country	United States
City	Washington, DC
Period	11/12/5 → 11/12/7

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2011.6131660

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Cite this

Endo, K., O'Uchi, S. I., Ishikawa, Y., Liu, Y., Matsukawa, T., Sakamoto, K., Tsukada, J., Yamauchi, H., & Masahara, M. (2011). Correlative analysis between characteristics of 30-nm L _G FinFETs and SRAM performance. In 2011 International Electron Devices Meeting, IEDM 2011 [6131660] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2011.6131660

Correlative analysis between characteristics of 30-nm L _G FinFETs and SRAM performance. / Endo, Kazuhiko; O'Uchi, Shin Ichi; Ishikawa, Yuki; Liu, Yongxun; Matsukawa, Takashi; Sakamoto, Kunihiro; Tsukada, Junichi; Yamauchi, Hiromi; Masahara, Meishoku.

2011 International Electron Devices Meeting, IEDM 2011. 2011. 6131660 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Endo, K, O'Uchi, SI, Ishikawa, Y, Liu, Y, Matsukawa, T, Sakamoto, K, Tsukada, J, Yamauchi, H & Masahara, M 2011, Correlative analysis between characteristics of 30-nm L _G FinFETs and SRAM performance. in 2011 International Electron Devices Meeting, IEDM 2011., 6131660, Technical Digest - International Electron Devices Meeting, IEDM, 2011 IEEE International Electron Devices Meeting, IEDM 2011, Washington, DC, United States, 11/12/5. https://doi.org/10.1109/IEDM.2011.6131660

Endo, Kazuhiko ; O'Uchi, Shin Ichi ; Ishikawa, Yuki ; Liu, Yongxun ; Matsukawa, Takashi ; Sakamoto, Kunihiro ; Tsukada, Junichi ; Yamauchi, Hiromi ; Masahara, Meishoku. / Correlative analysis between characteristics of 30-nm L _G FinFETs and SRAM performance. 2011 International Electron Devices Meeting, IEDM 2011. 2011. (Technical Digest - International Electron Devices Meeting, IEDM).

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abstract = "SRAM cells with 30-nm LG FinFETs have been successfully fabricated and the correlation between the characteristics of the FinFETs and the SRAM performance are precisely studied. By investigating an effect of the V th variation to the static noise margin (SNM) of two different memory states of the storage node, it is revealed that the V th variations of the pull-up, pull-down, and pass-gate transistors correlate with the SNM and this correlation strongly depends on the memory state.",

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AB - SRAM cells with 30-nm LG FinFETs have been successfully fabricated and the correlation between the characteristics of the FinFETs and the SRAM performance are precisely studied. By investigating an effect of the V th variation to the static noise margin (SNM) of two different memory states of the storage node, it is revealed that the V th variations of the pull-up, pull-down, and pass-gate transistors correlate with the SNM and this correlation strongly depends on the memory state.

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