TY - GEN
T1 - Correlative analysis between characteristics of 30-nm L G FinFETs and SRAM performance
AU - Endo, Kazuhiko
AU - O'Uchi, Shin Ichi
AU - Ishikawa, Yuki
AU - Liu, Yongxun
AU - Matsukawa, Takashi
AU - Sakamoto, Kunihiro
AU - Tsukada, Junichi
AU - Yamauchi, Hiromi
AU - Masahara, Meishoku
PY - 2011/12/1
Y1 - 2011/12/1
N2 - SRAM cells with 30-nm LG FinFETs have been successfully fabricated and the correlation between the characteristics of the FinFETs and the SRAM performance are precisely studied. By investigating an effect of the V th variation to the static noise margin (SNM) of two different memory states of the storage node, it is revealed that the V th variations of the pull-up, pull-down, and pass-gate transistors correlate with the SNM and this correlation strongly depends on the memory state.
AB - SRAM cells with 30-nm LG FinFETs have been successfully fabricated and the correlation between the characteristics of the FinFETs and the SRAM performance are precisely studied. By investigating an effect of the V th variation to the static noise margin (SNM) of two different memory states of the storage node, it is revealed that the V th variations of the pull-up, pull-down, and pass-gate transistors correlate with the SNM and this correlation strongly depends on the memory state.
UR - http://www.scopus.com/inward/record.url?scp=84863014189&partnerID=8YFLogxK
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U2 - 10.1109/IEDM.2011.6131660
DO - 10.1109/IEDM.2011.6131660
M3 - Conference contribution
AN - SCOPUS:84863014189
SN - 9781457705052
T3 - Technical Digest - International Electron Devices Meeting, IEDM
BT - 2011 International Electron Devices Meeting, IEDM 2011
T2 - 2011 IEEE International Electron Devices Meeting, IEDM 2011
Y2 - 5 December 2011 through 7 December 2011
ER -