Correlative analysis between characteristics of 30-nm L G FinFETs and SRAM performance

Kazuhiko Endo, Shin Ichi O'Uchi, Yuki Ishikawa, Yongxun Liu, Takashi Matsukawa, Kunihiro Sakamoto, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

SRAM cells with 30-nm LG FinFETs have been successfully fabricated and the correlation between the characteristics of the FinFETs and the SRAM performance are precisely studied. By investigating an effect of the V th variation to the static noise margin (SNM) of two different memory states of the storage node, it is revealed that the V th variations of the pull-up, pull-down, and pass-gate transistors correlate with the SNM and this correlation strongly depends on the memory state.

Original languageEnglish
Title of host publication2011 International Electron Devices Meeting, IEDM 2011
DOIs
Publication statusPublished - 2011 Dec 1
Externally publishedYes
Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
Duration: 2011 Dec 52011 Dec 7

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2011 IEEE International Electron Devices Meeting, IEDM 2011
CountryUnited States
CityWashington, DC
Period11/12/511/12/7

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Endo, K., O'Uchi, S. I., Ishikawa, Y., Liu, Y., Matsukawa, T., Sakamoto, K., Tsukada, J., Yamauchi, H., & Masahara, M. (2011). Correlative analysis between characteristics of 30-nm L G FinFETs and SRAM performance. In 2011 International Electron Devices Meeting, IEDM 2011 [6131660] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2011.6131660