Correlation of surface chemistry of GaAs substrates with growth mode and stacking fault density in ZnSe epilayers

Soon Ku Hong, Ji Ho Chang, Takashi Hanada, Elisabeth Kurtz, Masaoki Oku, Takafumi Yao

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The correlation of surface chemistry of GaAs substrates with growth model and stacking fault density in ZnSe epilayers was studied. The surface oxide layers of GaAs substrates before and after chemical etching using a NH4OH-based solution were also investigated using angle-resolved X-ray photoelectron spectroscopy. It was found that the proper pregrowth treatments of epiready GaAs (001) substrates to obtain clean surfaces are important to two-dimensional layer-by-layer growth and suppression of generation of stacking faults.

Original languageEnglish
Pages (from-to)1948-1954
Number of pages7
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume20
Issue number6
DOIs
Publication statusPublished - 2002 Nov 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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