The correlation between threshold voltage (V T) and channel boron concentration in silicon-based 65 nm node negative-type metal-oxide- semiconductor field-effect transistors was studied by atom probe tomography (APT). V T values were determined for one million transistors in a single chip, and transistors having a ±4σ deviation from the median V T were analyzed using APT. V T and the channel boron concentration were positively correlated. This is consistent with the relationship between the average boron concentration of wafers implanted with different channel doses and the median V T of the million transistors. APT is suitable for the study of dopant-distribution-based device failure mechanisms.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)