Abstract
The correlation between threshold voltage (V T) and channel boron concentration in silicon-based 65 nm node negative-type metal-oxide- semiconductor field-effect transistors was studied by atom probe tomography (APT). V T values were determined for one million transistors in a single chip, and transistors having a ±4σ deviation from the median V T were analyzed using APT. V T and the channel boron concentration were positively correlated. This is consistent with the relationship between the average boron concentration of wafers implanted with different channel doses and the median V T of the million transistors. APT is suitable for the study of dopant-distribution-based device failure mechanisms.
Original language | English |
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Article number | 253504 |
Journal | Applied Physics Letters |
Volume | 100 |
Issue number | 25 |
DOIs | |
Publication status | Published - 2012 Jun 18 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)