Correlation between threshold voltage and channel dopant concentration in negative-type metal-oxide-semiconductor field-effect transistors studied by atom probe tomography

H. Takamizawa, Y. Shimizu, K. Inoue, T. Toyama, F. Yano, A. Nishida, T. Mogami, N. Okada, M. Kato, H. Uchida, K. Kitamoto, T. Miyagi, J. Kato, Y. Nagai

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23 Citations (Scopus)

Abstract

The correlation between threshold voltage (V T) and channel boron concentration in silicon-based 65 nm node negative-type metal-oxide- semiconductor field-effect transistors was studied by atom probe tomography (APT). V T values were determined for one million transistors in a single chip, and transistors having a ±4σ deviation from the median V T were analyzed using APT. V T and the channel boron concentration were positively correlated. This is consistent with the relationship between the average boron concentration of wafers implanted with different channel doses and the median V T of the million transistors. APT is suitable for the study of dopant-distribution-based device failure mechanisms.

Original languageEnglish
Article number253504
JournalApplied Physics Letters
Volume100
Issue number25
DOIs
Publication statusPublished - 2012 Jun 18

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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