Correlation between threshold voltage and channel dopant concentration in negative-type metal-oxide-semiconductor field-effect transistors studied by atom probe tomography

H. Takamizawa; Y. Shimizu; K. Inoue; T. Toyama; F. Yano; A. Nishida; T. Mogami; N. Okada; M. Kato; H. Uchida; K. Kitamoto; T. Miyagi; J. Kato; Y. Nagai

doi:10.1063/1.4730437

Correlation between threshold voltage and channel dopant concentration in negative-type metal-oxide-semiconductor field-effect transistors studied by atom probe tomography

H. Takamizawa, Y. Shimizu, K. Inoue, T. Toyama, F. Yano, A. Nishida, T. Mogami, N. Okada, M. Kato, H. Uchida, K. Kitamoto, T. Miyagi, J. Kato, Y. Nagai

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

The correlation between threshold voltage (V _T) and channel boron concentration in silicon-based 65 nm node negative-type metal-oxide- semiconductor field-effect transistors was studied by atom probe tomography (APT). V _T values were determined for one million transistors in a single chip, and transistors having a ±4σ deviation from the median V _T were analyzed using APT. V _T and the channel boron concentration were positively correlated. This is consistent with the relationship between the average boron concentration of wafers implanted with different channel doses and the median V _T of the million transistors. APT is suitable for the study of dopant-distribution-based device failure mechanisms.

Original language	English
Article number	253504
Journal	Applied Physics Letters
Volume	100
Issue number	25
DOIs	https://doi.org/10.1063/1.4730437
Publication status	Published - 2012 Jun 18

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Takamizawa, H., Shimizu, Y., Inoue, K., Toyama, T., Yano, F., Nishida, A., Mogami, T., Okada, N., Kato, M., Uchida, H., Kitamoto, K., Miyagi, T., Kato, J., & Nagai, Y. (2012). Correlation between threshold voltage and channel dopant concentration in negative-type metal-oxide-semiconductor field-effect transistors studied by atom probe tomography. Applied Physics Letters, 100(25), [253504]. https://doi.org/10.1063/1.4730437

Correlation between threshold voltage and channel dopant concentration in negative-type metal-oxide-semiconductor field-effect transistors studied by atom probe tomography. / Takamizawa, H.; Shimizu, Y.; Inoue, K.; Toyama, T.; Yano, F.; Nishida, A.; Mogami, T.; Okada, N.; Kato, M.; Uchida, H.; Kitamoto, K.; Miyagi, T.; Kato, J.; Nagai, Y.

In: Applied Physics Letters, Vol. 100, No. 25, 253504, 18.06.2012.

Research output: Contribution to journal › Article › peer-review

Takamizawa, H, Shimizu, Y, Inoue, K , Toyama, T, Yano, F, Nishida, A, Mogami, T, Okada, N, Kato, M, Uchida, H, Kitamoto, K, Miyagi, T, Kato, J & Nagai, Y 2012, 'Correlation between threshold voltage and channel dopant concentration in negative-type metal-oxide-semiconductor field-effect transistors studied by atom probe tomography', Applied Physics Letters, vol. 100, no. 25, 253504. https://doi.org/10.1063/1.4730437

Takamizawa, H. ; Shimizu, Y. ; Inoue, K. ; Toyama, T. ; Yano, F. ; Nishida, A. ; Mogami, T. ; Okada, N. ; Kato, M. ; Uchida, H. ; Kitamoto, K. ; Miyagi, T. ; Kato, J. ; Nagai, Y. / Correlation between threshold voltage and channel dopant concentration in negative-type metal-oxide-semiconductor field-effect transistors studied by atom probe tomography. In: Applied Physics Letters. 2012 ; Vol. 100, No. 25.

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abstract = "The correlation between threshold voltage (V T) and channel boron concentration in silicon-based 65 nm node negative-type metal-oxide- semiconductor field-effect transistors was studied by atom probe tomography (APT). V T values were determined for one million transistors in a single chip, and transistors having a ±4σ deviation from the median V T were analyzed using APT. V T and the channel boron concentration were positively correlated. This is consistent with the relationship between the average boron concentration of wafers implanted with different channel doses and the median V T of the million transistors. APT is suitable for the study of dopant-distribution-based device failure mechanisms.",

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