The quality of epitaxial graphene on silicon (GOS) is negatively correlated with the residual stress of the 3C-SiC films grown on the Si substrates. This has been systematically demonstrated by use of a series of 3C-SiC films formed on Si(110) substrates with varied residual stress. The residual stress of the3C-SiC film and the grain size of graphene were estimated with Raman-scattering spectroscopy while the crystallinity of the3C-SiC filmwas evaluated by X-ray diffraction. The more it reduces the residual stress the better the GOS quality it becomes. In particular, use of the rotated epitaxial film of 3C-SiC formed on Si(110) substrate, which gives the lowest residual stress, is found to produce a graphene with one of the best quality ever obtained in GOS. The revealed GOS quality improvement opens new opportunities for the production of high-performance GOS-based devices.
|Journal||IOP Conference Series: Materials Science and Engineering|
|Publication status||Published - 2015 Jun 10|
|Event||1st International Conference in Applied Physics and Materials Science, ICAMS 2013 - Davao City, Philippines|
Duration: 2013 Oct 24 → 2013 Oct 26
ASJC Scopus subject areas
- Materials Science(all)