Correlation between the magnitude of interlayer exchange coupling and charge-to-spin conversion efficiency in a synthetic antiferromagnetic system

Yoshiaki Saito; Shoji Ikeda; Tetsuo Endoh

doi:10.35848/1882-0786/acb311

Correlation between the magnitude of interlayer exchange coupling and charge-to-spin conversion efficiency in a synthetic antiferromagnetic system

Yoshiaki Saito, Shoji Ikeda, Tetsuo Endoh

Research output: Contribution to journal › Article › peer-review

Abstract

The correlation between the magnitude of interlayer exchange coupling (J _ex) and charge-to-spin conversion efficiency (spin Hall angle: θ _SH) is investigated in a synthetic antiferromagnetic (AF) system with compensated magnetization. The magnitude of θ _SH increases linearly with increasing the magnitude of J _ex. We observe the factor of 6.5 increase of spin Hall angle (θ _SH = 45.8%) in a low resistive (ρ _xx = 41 μΩcm) synthetic AF system by increasing the magnitude of J _ex. The low resistive synthetic AF system will be a promising building block for future nonvolatile high-speed memories and logic circuits using the spin Hall effect.

Original language	English
Article number	013002
Journal	Applied Physics Express
Volume	16
Issue number	1
DOIs	https://doi.org/10.35848/1882-0786/acb311
Publication status	Published - 2023 Jan

Keywords

interlayer exchange coupling
spin hall angle
spin hall effect
spintronics
synthetic antiferromanet

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.35848/1882-0786/acb311

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title = "Correlation between the magnitude of interlayer exchange coupling and charge-to-spin conversion efficiency in a synthetic antiferromagnetic system",

abstract = "The correlation between the magnitude of interlayer exchange coupling (J ex) and charge-to-spin conversion efficiency (spin Hall angle: θ SH) is investigated in a synthetic antiferromagnetic (AF) system with compensated magnetization. The magnitude of θ SH increases linearly with increasing the magnitude of J ex. We observe the factor of 6.5 increase of spin Hall angle (θ SH = 45.8%) in a low resistive (ρ xx = 41 μΩcm) synthetic AF system by increasing the magnitude of J ex. The low resistive synthetic AF system will be a promising building block for future nonvolatile high-speed memories and logic circuits using the spin Hall effect.",

keywords = "interlayer exchange coupling, spin hall angle, spin hall effect, spintronics, synthetic antiferromanet",

author = "Yoshiaki Saito and Shoji Ikeda and Tetsuo Endoh",

note = "Funding Information: This work was supported by the CIES Consortium, MEXT Initiative to Establish Next-generation Novel Integrated Circuits Centers (X-NICS) Grant Number JPJ011438 and JSPS KAKENHI (JP19H00844 and JP21K18189). Publisher Copyright: {\textcopyright} 2023 The Japan Society of Applied Physics.",

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doi = "10.35848/1882-0786/acb311",

language = "English",

volume = "16",

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AU - Saito, Yoshiaki

AU - Ikeda, Shoji

AU - Endoh, Tetsuo

N1 - Funding Information: This work was supported by the CIES Consortium, MEXT Initiative to Establish Next-generation Novel Integrated Circuits Centers (X-NICS) Grant Number JPJ011438 and JSPS KAKENHI (JP19H00844 and JP21K18189). Publisher Copyright: © 2023 The Japan Society of Applied Physics.

PY - 2023/1

Y1 - 2023/1

N2 - The correlation between the magnitude of interlayer exchange coupling (J ex) and charge-to-spin conversion efficiency (spin Hall angle: θ SH) is investigated in a synthetic antiferromagnetic (AF) system with compensated magnetization. The magnitude of θ SH increases linearly with increasing the magnitude of J ex. We observe the factor of 6.5 increase of spin Hall angle (θ SH = 45.8%) in a low resistive (ρ xx = 41 μΩcm) synthetic AF system by increasing the magnitude of J ex. The low resistive synthetic AF system will be a promising building block for future nonvolatile high-speed memories and logic circuits using the spin Hall effect.

AB - The correlation between the magnitude of interlayer exchange coupling (J ex) and charge-to-spin conversion efficiency (spin Hall angle: θ SH) is investigated in a synthetic antiferromagnetic (AF) system with compensated magnetization. The magnitude of θ SH increases linearly with increasing the magnitude of J ex. We observe the factor of 6.5 increase of spin Hall angle (θ SH = 45.8%) in a low resistive (ρ xx = 41 μΩcm) synthetic AF system by increasing the magnitude of J ex. The low resistive synthetic AF system will be a promising building block for future nonvolatile high-speed memories and logic circuits using the spin Hall effect.

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KW - spin hall effect

KW - spintronics

KW - synthetic antiferromanet

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Correlation between the magnitude of interlayer exchange coupling and charge-to-spin conversion efficiency in a synthetic antiferromagnetic system

Abstract

Keywords

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