Correlation between the location of the interface state minimum at insulator-semiconductor interfaces and schottky barrier heights

Hideo Ohno; Hideki Hasegawa

doi:10.1143/JJAP.25.L353

Correlation between the location of the interface state minimum at insulator-semiconductor interfaces and schottky barrier heights

Hideo Ohno, Hideki Hasegawa

Research output: Contribution to journal › Article

5 Citations (Scopus)

Abstract

Correlation between the energy location of the minimum density of the interface states in insulator-semiconductor systems and the location of the Fermi level pinning in metal-semiconductor systems is reported. The correlation extends over the major III-V semiconductors, which can be explained by the surface disorder model. The unified defect model is not capable of explaining the present correlation.

Original language	English
Pages (from-to)	L353-L356
Journal	Japanese journal of applied physics
Volume	25
Issue number	5
DOIs	https://doi.org/10.1143/JJAP.25.L353
Publication status	Published - 1986 May
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Ohno, H., & Hasegawa, H. (1986). Correlation between the location of the interface state minimum at insulator-semiconductor interfaces and schottky barrier heights. Japanese journal of applied physics, 25(5), L353-L356. https://doi.org/10.1143/JJAP.25.L353

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