Correlation between the internal quantum efficiency and photoluminescence lifetime of the near-band-edge emission in a ZnO single crystal grown by the hydrothermal method

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Abstract

The internal quantum efficiency (IQE) and photoluminescence lifetime of the near-band-edge emission in a ZnO single crystal grown by the hydrothermal method were measured by the omnidirectional photoluminescence and time-resolved photoluminescence spectroscopy, respectively. The IQE showed a monotonic increase when the cw photo pumping density exceeds W cm-2, while a constant IQE was observed below that. By using the data set of IQE and measured under pulsed excitation conditions, radiative and nonradiative recombination lifetimes were separately quantified. Since a significant increase was observed for the nonradiative recombination lifetime, the origin of the IQE increase was revealed to be dominated by the saturation of nonradiative recombination centers.

Original languageEnglish
Article number121005
JournalApplied Physics Express
Volume13
Issue number12
DOIs
Publication statusPublished - 2020 Dec 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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