TY - JOUR
T1 - Correlation between Raman intensity of the N-related local vibrational mode and N content in GaAsN strained layers grown by MOVPE
AU - Panpech, P.
AU - Vijarnwannaluk, S.
AU - Sanorpim, S.
AU - Ono, W.
AU - Nakajima, F.
AU - Katayama, R.
AU - Onabe, K.
N1 - Funding Information:
The authors would like to acknowledge S. Kuboya and K. Itagaki for their helpful cooperation in the MOVPE growth. This work has been supported by National Science and Technology Development Agency (NSTDA), Thailand Research Fund (Contact Number MRG4880018), Thailand-Japan Technology Transfer Project-Overseas Economic Cooperation Fund (TJTTP-OECF) and graduate school, Department of Physics, Faculty of Science, Chulalongkorn University.
PY - 2007/1
Y1 - 2007/1
N2 - GaAs1-xNx alloy films (0≤x≤0.055) grown on GaAs (0 0 1) substrates by metalorganic vapor phase epitaxy (MOVPE) using TBAs and DMHy as As and N precursors, respectively, have been investigated by Raman spectroscopy. It was found that, with incorporating N up to x = 0.055, a single N-related localized vibrational mode (LVM) is observed at around 468-475 cm-1. We have investigated the N-related LVM Raman intensity (ILVM) and frequency (ωLVM) as a function of N concentration. Both the ILVM and the ωLVM were found to rise for the GaAs1-xNx films with higher N incorporation. It is also evident that the N concentration in the GaAs1-xNx grown films determined by Raman spectroscopy technique (xRaman) exhibits a linear dependence on the N concentrations determined by the high resolution X-ray diffraction (HRXRD) (xXRD). Our results demonstrate that the linear dependence of the xRaman on the xXRD provides a useful calibration method to determine the N concentration in dilute GaAs1-xNx films (xXRD≤0.055).
AB - GaAs1-xNx alloy films (0≤x≤0.055) grown on GaAs (0 0 1) substrates by metalorganic vapor phase epitaxy (MOVPE) using TBAs and DMHy as As and N precursors, respectively, have been investigated by Raman spectroscopy. It was found that, with incorporating N up to x = 0.055, a single N-related localized vibrational mode (LVM) is observed at around 468-475 cm-1. We have investigated the N-related LVM Raman intensity (ILVM) and frequency (ωLVM) as a function of N concentration. Both the ILVM and the ωLVM were found to rise for the GaAs1-xNx films with higher N incorporation. It is also evident that the N concentration in the GaAs1-xNx grown films determined by Raman spectroscopy technique (xRaman) exhibits a linear dependence on the N concentrations determined by the high resolution X-ray diffraction (HRXRD) (xXRD). Our results demonstrate that the linear dependence of the xRaman on the xXRD provides a useful calibration method to determine the N concentration in dilute GaAs1-xNx films (xXRD≤0.055).
KW - A1. Compositional analysis
KW - A1. High-resolution X-ray diffraction
KW - A3. MOVPE
KW - B1. GaAsN alloys
KW - B1. III-V-nitrides
KW - B2. Semiconducting ternary compounds
UR - http://www.scopus.com/inward/record.url?scp=33846539312&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33846539312&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2006.10.009
DO - 10.1016/j.jcrysgro.2006.10.009
M3 - Article
AN - SCOPUS:33846539312
VL - 298
SP - 107
EP - 110
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - SPEC. ISS
ER -