Correlation between Raman intensity of the N-related local vibrational mode and N content in GaAsN strained layers grown by MOVPE

P. Panpech, S. Vijarnwannaluk, S. Sanorpim, W. Ono, F. Nakajima, Ryuji Katayama, K. Onabe

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

GaAs1-xNx alloy films (0≤x≤0.055) grown on GaAs (0 0 1) substrates by metalorganic vapor phase epitaxy (MOVPE) using TBAs and DMHy as As and N precursors, respectively, have been investigated by Raman spectroscopy. It was found that, with incorporating N up to x = 0.055, a single N-related localized vibrational mode (LVM) is observed at around 468-475 cm-1. We have investigated the N-related LVM Raman intensity (ILVM) and frequency (ωLVM) as a function of N concentration. Both the ILVM and the ωLVM were found to rise for the GaAs1-xNx films with higher N incorporation. It is also evident that the N concentration in the GaAs1-xNx grown films determined by Raman spectroscopy technique (xRaman) exhibits a linear dependence on the N concentrations determined by the high resolution X-ray diffraction (HRXRD) (xXRD). Our results demonstrate that the linear dependence of the xRaman on the xXRD provides a useful calibration method to determine the N concentration in dilute GaAs1-xNx films (xXRD≤0.055).

Original languageEnglish
Pages (from-to)107-110
Number of pages4
JournalJournal of Crystal Growth
Volume298
Issue numberSPEC. ISS
DOIs
Publication statusPublished - 2007 Jan 1

Keywords

  • A1. Compositional analysis
  • A1. High-resolution X-ray diffraction
  • A3. MOVPE
  • B1. GaAsN alloys
  • B1. III-V-nitrides
  • B2. Semiconducting ternary compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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