Correlation between photoluminescence and surface-state density on gaas surfaces subjected to various surface treatments

Hideki Hasegawa, Toshiya Saitoh, Seiichi Konishi, Hirotatsu Ishii, Hideo Ohno

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

Relationship between band edge photoluminescence (PL) and surface states is rigorously analyzed on computer, using the disorder-induced gap state (DIGS) model, and is compared with experiments on GaAs surfaces subjected to various treatments. It is shown that PL intensity is directly correlated with the effective surface recombination velocity, but is not necessarily directly correlated with the surface-state density (Nss) itself. PL enhancement by photochemical oxidation and by Na2S deposition is proposed to be due to a fixed negative charge, whereas photochemical treatment in HCl leads to significant reduction in Nss.

Original languageEnglish
Pages (from-to)L2177-L2179
JournalJapanese journal of applied physics
Volume27
Issue number11 A
DOIs
Publication statusPublished - 1988 Nov
Externally publishedYes

Keywords

  • Fermi level pinning
  • Gaas
  • NaS deposition
  • Photochemical surface treatments
  • Photoluminescence
  • Surface recombination
  • Surface states
  • Surface-state density

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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