A relationship between the gate oxide lifetime (tbd), temperature (T), and the electrical stress for the reliability testing is investigated. Based on the various lifetime testing results reported by previous investigators, a new parameter for the oxide lifetime prediction is introduced. The parameter T[log(fbd)+C], where C is a constant, has a linear relationship with respect to the electrical stress field in the oxide. By using the above parameter, it becomes easy to describe and compare the characteristics of oxide reliability on one graph.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering