Correlation between lifetime, temperature, and electrical stress for gate oxide lifetime testing

Koji Eriguchi, Masaaki Niwa

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

A relationship between the gate oxide lifetime (tbd), temperature (T), and the electrical stress for the reliability testing is investigated. Based on the various lifetime testing results reported by previous investigators, a new parameter for the oxide lifetime prediction is introduced. The parameter T[log(fbd)+C], where C is a constant, has a linear relationship with respect to the electrical stress field in the oxide. By using the above parameter, it becomes easy to describe and compare the characteristics of oxide reliability on one graph.

Original languageEnglish
Pages (from-to)577-579
Number of pages3
JournalIEEE Electron Device Letters
Volume18
Issue number12
DOIs
Publication statusPublished - 1997 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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