Correlation between lifetime, temperature, and electrical stress for gate oxide lifetime testing

Koji Eriguchi; Masaaki Niwa

doi:10.1109/55.644076

Correlation between lifetime, temperature, and electrical stress for gate oxide lifetime testing

Koji Eriguchi, Masaaki Niwa

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A relationship between the gate oxide lifetime (t_bd), temperature (T), and the electrical stress for the reliability testing is investigated. Based on the various lifetime testing results reported by previous investigators, a new parameter for the oxide lifetime prediction is introduced. The parameter T[log(f_bd)+C], where C is a constant, has a linear relationship with respect to the electrical stress field in the oxide. By using the above parameter, it becomes easy to describe and compare the characteristics of oxide reliability on one graph.

Original language	English
Pages (from-to)	577-579
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	18
Issue number	12
DOIs	https://doi.org/10.1109/55.644076
Publication status	Published - 1997 Dec 1
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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AB - A relationship between the gate oxide lifetime (tbd), temperature (T), and the electrical stress for the reliability testing is investigated. Based on the various lifetime testing results reported by previous investigators, a new parameter for the oxide lifetime prediction is introduced. The parameter T[log(fbd)+C], where C is a constant, has a linear relationship with respect to the electrical stress field in the oxide. By using the above parameter, it becomes easy to describe and compare the characteristics of oxide reliability on one graph.

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Correlation between lifetime, temperature, and electrical stress for gate oxide lifetime testing

Abstract

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