We develop a general approach to precisely extract the device parameters in top-contact pentacene thin film transistors. The charge trap sites are clarified by analyzing the grain size dependence of the device parameters. The channel mobility and threshold voltage are limited by the charge traps in the channel region, most of which are located not at the grain boundaries but at the organic/insulating-layer interface. The contact resistance decreases by increasing the grain size and is controlled by the charge traps in the contact region, which are suggested to be concentrated at the grain boundaries and at the metal/organic interface.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)