Correlation between current-voltage characteristics and dislocations for n-GaN Schottky contacts

Kenji Shiojima; Tetsuya Suemitsu; Mitsumasa Ogura

doi:10.1063/1.1370538

Correlation between current-voltage characteristics and dislocations for n-GaN Schottky contacts

Kenji Shiojima, Tetsuya Suemitsu, Mitsumasa Ogura

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

We directly evaluated the effect of dislocations on current-voltage (I-V) characteristics of Au/Ni/n-GaN Schottky contacts. A submicrometer Schottky dot array was formed by electron beam lithography, and I-V measurements were conducted using atomic force microscopy with a conductive probe. The sample, which has a free electron concentration of 5.8×10¹⁷cm^-3, showed that neither dislocations nor steps affect the I-V characteristics. These results indicate that, in fabricating short-gate FETs, gate Schottky contacts containing dislocations should not be considered a problem with respect to uniformity and reproducibility.

Original language	English
Pages (from-to)	3636-3638
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	23
DOIs	https://doi.org/10.1063/1.1370538
Publication status	Published - 2001 Jun 4
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{55ed3752e8854b9b93588840d28e7193,

title = "Correlation between current-voltage characteristics and dislocations for n-GaN Schottky contacts",

abstract = "We directly evaluated the effect of dislocations on current-voltage (I-V) characteristics of Au/Ni/n-GaN Schottky contacts. A submicrometer Schottky dot array was formed by electron beam lithography, and I-V measurements were conducted using atomic force microscopy with a conductive probe. The sample, which has a free electron concentration of 5.8×1017cm-3, showed that neither dislocations nor steps affect the I-V characteristics. These results indicate that, in fabricating short-gate FETs, gate Schottky contacts containing dislocations should not be considered a problem with respect to uniformity and reproducibility.",

author = "Kenji Shiojima and Tetsuya Suemitsu and Mitsumasa Ogura",

year = "2001",

month = jun,

day = "4",

doi = "10.1063/1.1370538",

language = "English",

volume = "78",

pages = "3636--3638",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "23",

}

TY - JOUR

T1 - Correlation between current-voltage characteristics and dislocations for n-GaN Schottky contacts

AU - Shiojima, Kenji

AU - Suemitsu, Tetsuya

AU - Ogura, Mitsumasa

PY - 2001/6/4

Y1 - 2001/6/4

N2 - We directly evaluated the effect of dislocations on current-voltage (I-V) characteristics of Au/Ni/n-GaN Schottky contacts. A submicrometer Schottky dot array was formed by electron beam lithography, and I-V measurements were conducted using atomic force microscopy with a conductive probe. The sample, which has a free electron concentration of 5.8×1017cm-3, showed that neither dislocations nor steps affect the I-V characteristics. These results indicate that, in fabricating short-gate FETs, gate Schottky contacts containing dislocations should not be considered a problem with respect to uniformity and reproducibility.

AB - We directly evaluated the effect of dislocations on current-voltage (I-V) characteristics of Au/Ni/n-GaN Schottky contacts. A submicrometer Schottky dot array was formed by electron beam lithography, and I-V measurements were conducted using atomic force microscopy with a conductive probe. The sample, which has a free electron concentration of 5.8×1017cm-3, showed that neither dislocations nor steps affect the I-V characteristics. These results indicate that, in fabricating short-gate FETs, gate Schottky contacts containing dislocations should not be considered a problem with respect to uniformity and reproducibility.

UR - http://www.scopus.com/inward/record.url?scp=0035806184&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035806184&partnerID=8YFLogxK

U2 - 10.1063/1.1370538

DO - 10.1063/1.1370538

M3 - Article

AN - SCOPUS:0035806184

VL - 78

SP - 3636

EP - 3638

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

ER -

Correlation between current-voltage characteristics and dislocations for n-GaN Schottky contacts

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