Correlation between current-voltage characteristics and dislocations for n-GaN Schottky contacts

Kenji Shiojima; Tetsuya Suemitsu; Mitsumasa Ogura

doi:10.1063/1.1370538

Correlation between current-voltage characteristics and dislocations for n-GaN Schottky contacts

Kenji Shiojima, Tetsuya Suemitsu, Mitsumasa Ogura

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

We directly evaluated the effect of dislocations on current-voltage (I-V) characteristics of Au/Ni/n-GaN Schottky contacts. A submicrometer Schottky dot array was formed by electron beam lithography, and I-V measurements were conducted using atomic force microscopy with a conductive probe. The sample, which has a free electron concentration of 5.8×10¹⁷cm^-3, showed that neither dislocations nor steps affect the I-V characteristics. These results indicate that, in fabricating short-gate FETs, gate Schottky contacts containing dislocations should not be considered a problem with respect to uniformity and reproducibility.

Original language	English
Pages (from-to)	3636-3638
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	23
DOIs	https://doi.org/10.1063/1.1370538
Publication status	Published - 2001 Jun 4
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "We directly evaluated the effect of dislocations on current-voltage (I-V) characteristics of Au/Ni/n-GaN Schottky contacts. A submicrometer Schottky dot array was formed by electron beam lithography, and I-V measurements were conducted using atomic force microscopy with a conductive probe. The sample, which has a free electron concentration of 5.8×1017cm-3, showed that neither dislocations nor steps affect the I-V characteristics. These results indicate that, in fabricating short-gate FETs, gate Schottky contacts containing dislocations should not be considered a problem with respect to uniformity and reproducibility.",

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AU - Suemitsu, Tetsuya

AU - Ogura, Mitsumasa

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Y1 - 2001/6/4

N2 - We directly evaluated the effect of dislocations on current-voltage (I-V) characteristics of Au/Ni/n-GaN Schottky contacts. A submicrometer Schottky dot array was formed by electron beam lithography, and I-V measurements were conducted using atomic force microscopy with a conductive probe. The sample, which has a free electron concentration of 5.8×1017cm-3, showed that neither dislocations nor steps affect the I-V characteristics. These results indicate that, in fabricating short-gate FETs, gate Schottky contacts containing dislocations should not be considered a problem with respect to uniformity and reproducibility.

AB - We directly evaluated the effect of dislocations on current-voltage (I-V) characteristics of Au/Ni/n-GaN Schottky contacts. A submicrometer Schottky dot array was formed by electron beam lithography, and I-V measurements were conducted using atomic force microscopy with a conductive probe. The sample, which has a free electron concentration of 5.8×1017cm-3, showed that neither dislocations nor steps affect the I-V characteristics. These results indicate that, in fabricating short-gate FETs, gate Schottky contacts containing dislocations should not be considered a problem with respect to uniformity and reproducibility.

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Correlation between current-voltage characteristics and dislocations for n-GaN Schottky contacts

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