Abstract
We directly evaluated the effect of dislocations on current-voltage (I-V) characteristics of Au/Ni/n-GaN Schottky contacts. A submicrometer Schottky dot array was formed by electron beam lithography, and I-V measurements were conducted using atomic force microscopy with a conductive probe. The sample, which has a free electron concentration of 5.8×1017cm-3, showed that neither dislocations nor steps affect the I-V characteristics. These results indicate that, in fabricating short-gate FETs, gate Schottky contacts containing dislocations should not be considered a problem with respect to uniformity and reproducibility.
Original language | English |
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Pages (from-to) | 3636-3638 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 78 |
Issue number | 23 |
DOIs | |
Publication status | Published - 2001 Jun 4 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)