Correlation between current-voltage characteristics and dislocations for n-GaN Schottky contacts

Kenji Shiojima, Tetsuya Suemitsu, Mitsumasa Ogura

Research output: Contribution to journalArticlepeer-review

38 Citations (Scopus)

Abstract

We directly evaluated the effect of dislocations on current-voltage (I-V) characteristics of Au/Ni/n-GaN Schottky contacts. A submicrometer Schottky dot array was formed by electron beam lithography, and I-V measurements were conducted using atomic force microscopy with a conductive probe. The sample, which has a free electron concentration of 5.8×1017cm-3, showed that neither dislocations nor steps affect the I-V characteristics. These results indicate that, in fabricating short-gate FETs, gate Schottky contacts containing dislocations should not be considered a problem with respect to uniformity and reproducibility.

Original languageEnglish
Pages (from-to)3636-3638
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number23
DOIs
Publication statusPublished - 2001 Jun 4
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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