Correlation between crystalline qualities and resistive switching effects of La0.7Sr0.3MnO3 films

Feng Wu; Xiaomin Li; Weidong Yu; Yiwen Zhang; Xun Cao

doi:10.1117/12.792624

Correlation between crystalline qualities and resistive switching effects of La_0.7Sr_0.3MnO₃ films

Feng Wu, Xiaomin Li, Weidong Yu, Yiwen Zhang, Xun Cao

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this work, La_0.7Sr_0.3MnO₃ (LSMO) thin films have been prepared on Pt/Ti/SiO₂/Si substrates at different substrate temperatures by pulsed laser deposition (PLD) method. Nonlinear current-voltage (I-V) behavior and the electric-pulse-induced resistance change were observed in all Ag/LSMO/Pt heterostructures. Resistive switching properties exhibit very strong dependences on the film crystalline qualities. Also, models for interpreting the results were also proposed.

Original language	English
Title of host publication	Sixth International Conference on Thin Film Physics and Applications
DOIs	https://doi.org/10.1117/12.792624
Publication status	Published - 2008
Externally published	Yes
Event	6th International Conference on Thin Film Physics and Applications, TFPA 2007 - Shanghai, China Duration: 2007 Sep 25 → 2007 Sep 28

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	6984
ISSN (Print)	0277-786X

Other

Other	6th International Conference on Thin Film Physics and Applications, TFPA 2007
Country/Territory	China
City	Shanghai
Period	07/9/25 → 07/9/28

Keywords

Manganites
Non-volatile memories
Pulsed laser deposition
Resistive switching

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.792624

Cite this

Correlation between crystalline qualities and resistive switching effects of La_0.7Sr_0.3MnO₃ films. / Wu, Feng; Li, Xiaomin; Yu, Weidong; Zhang, Yiwen; Cao, Xun.

Sixth International Conference on Thin Film Physics and Applications. 2008. 69841J (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6984).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wu, F, Li, X, Yu, W, Zhang, Y & Cao, X 2008, Correlation between crystalline qualities and resistive switching effects of La_0.7Sr_0.3MnO₃ films. in Sixth International Conference on Thin Film Physics and Applications., 69841J, Proceedings of SPIE - The International Society for Optical Engineering, vol. 6984, 6th International Conference on Thin Film Physics and Applications, TFPA 2007, Shanghai, China, 07/9/25. https://doi.org/10.1117/12.792624

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abstract = "In this work, La0.7Sr0.3MnO3 (LSMO) thin films have been prepared on Pt/Ti/SiO2/Si substrates at different substrate temperatures by pulsed laser deposition (PLD) method. Nonlinear current-voltage (I-V) behavior and the electric-pulse-induced resistance change were observed in all Ag/LSMO/Pt heterostructures. Resistive switching properties exhibit very strong dependences on the film crystalline qualities. Also, models for interpreting the results were also proposed.",

keywords = "Manganites, Non-volatile memories, Pulsed laser deposition, Resistive switching",

author = "Feng Wu and Xiaomin Li and Weidong Yu and Yiwen Zhang and Xun Cao",

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AU - Cao, Xun

PY - 2008

Y1 - 2008

N2 - In this work, La0.7Sr0.3MnO3 (LSMO) thin films have been prepared on Pt/Ti/SiO2/Si substrates at different substrate temperatures by pulsed laser deposition (PLD) method. Nonlinear current-voltage (I-V) behavior and the electric-pulse-induced resistance change were observed in all Ag/LSMO/Pt heterostructures. Resistive switching properties exhibit very strong dependences on the film crystalline qualities. Also, models for interpreting the results were also proposed.

AB - In this work, La0.7Sr0.3MnO3 (LSMO) thin films have been prepared on Pt/Ti/SiO2/Si substrates at different substrate temperatures by pulsed laser deposition (PLD) method. Nonlinear current-voltage (I-V) behavior and the electric-pulse-induced resistance change were observed in all Ag/LSMO/Pt heterostructures. Resistive switching properties exhibit very strong dependences on the film crystalline qualities. Also, models for interpreting the results were also proposed.

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