CORRELATION BETWEEN ATOMIC-SCALE STRUCTURES AND ELECTRONIC PROPERTIES AT COMPOUND SEMICONDUCTOR LAYERED INTERFACES.

Hideki Hasegawa, Hideo Ohno, Tetsuya Haga, Yutaka Abe, Heishichirou Takahashi, Takayuki Sawada, Li He, Hirotatsu Ishii

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Correlation between atomic-scale structures and interface state properties is investigated for compound semiconductor insulator-semiconductor (I-S) and semiconductor-semiconductor(S-S) interfaces, using cross-sectional TEM, RBS, XPS and C-V techniques. Thermal, anodic and plasma CVD I-S interfaces and homo- and hetero-epitaxial MOVPE interfaces were formed on GaAs and InP. The presence of processing-introduced disorder and its remarkably strong correlation with interface state density distributions were found, being consistent with the recently proposed disorder-induced gap state (DIGS) model. A particular space and energy distribution of the DIGs allows a complete self-consistent computer reproduction of hysteresis effects in MIS C-V curves.

Original languageEnglish
Title of host publicationConference on Solid State Devices and Materials
PublisherJapan Soc of Applied Physics
Pages479-482
Number of pages4
ISBN (Print)4930813212, 9784930813213
DOIs
Publication statusPublished - 1987
Externally publishedYes

Publication series

NameConference on Solid State Devices and Materials

ASJC Scopus subject areas

  • Engineering(all)

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